activity
20102023
most citedOne-by-one trap activation in silicon nanowire transistors

92 citations · 166 across the 5 of their papers we have counts for

collaborators

5 papers

cond-mat.mes-hall2023★ 5 cited

Valley splitting by extended zone effective mass approximation incorporating strain in silicon

Jinichiro Noborisaka, Toshiaki Hayashi, Akira Fujiwara +1

Silicon metal-oxide-semiconductor field effect transistors (MOSFETs) fabricated on a SIMOX (001) substrate, which is a kind of silicon on insulator (SOI) substrate, that is anneale…

cond-mat.mes-hall2017★ 47 cited

Estimation of π-π Electronic Couplings from Current Measurements

J. Trasobaresa, J. Rech, T. Jonckheere +14

The π-π interactions between organic molecules are among the most important parameters for optimizing the transport and optical properties of organic transistors, light-emitting di…

cond-mat.mes-hall2013★ 19 cited

Water Electrolysis and Energy Harvesting with 0D Ion-Sensitive Field-Effect Transistors

N. Clement, K. Nishiguchi, J. F. Dufreche +3

The relationship of the gas bubble size to the size distribution critically influences the effectiveness of electrochemical processes. Several optical and acoustical techniques hav…

cond-mat.mes-hall2012★ 3 cited

Simulating Capacitances to Silicon Quantum Dots: Breakdown of the Parallel Plate Capacitor Model

Ted Thorbeck, Akira Fujiwara, Neil M. Zimmerman

Many electrical applications of quantum dots rely on capacitively coupled gates; therefore, to make reliable devices we need those gate capacitances to be predictable and reproduci…

cond-mat.mes-hall2010★ 92 cited

One-by-one trap activation in silicon nanowire transistors

N. Clement, K. Nishiguchi, A. Fujiwara +1

Flicker or 1/f noise in metal-oxide-semiconductor field-effect transistors (MOSFETs) has been identified as the main source of noise at low frequency. It often originates from an e…