Disentangling the exchange coupling of entangled donors in the Si quantum computer architecture

Abstract

We develop a theory for micro-Raman scattering by single and coupled two-donor states in silicon. We find the Raman spectra to have significant dependence on the donor exchange splitting and the relative spatial positions of the two donor sites. In particular, we establish a strong correlation between the temperature dependence of the Raman peak intensity and the interdonor exchange coupling. Micro-Raman scattering can therefore potentially become a powerful tool to measure interqubit coupling in the development of a Si quantum computer architecture.

Title changed. Other minor changes

References in corpus (9)

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Cited by in corpus (8)

• Spintronics: Fundamentals and applications
• Silicon Quantum Electronics
• Spin quantum computation in silicon nanostructures
• Robust CNOT gates from almost any interaction
• Shallow donor wavefunctions and donor-pair exchange in silicon: Ab initio theory and floating-phase Heitler-London approach
• Electronic transport in two dimensional Si:P $\delta$-doped layers
• Electrical readout of a spin qubit without double occupancy
• Molecular orbital calculations of two-electron states for P donor solid-state spin qubits