Room temperature manipulation of long lifetime spins in metallic-like carbon nanospheres
arXiv:1611.07690 · doi:10.1038/ncomms12232
Abstract
The time-window for processing electron spin information (spintronics) in solid-state quantum electronic devices is determined by the spin-lattice (T1) and spin-spin (T2) relaxation times of electrons. Minimising the effects of spin-orbit coupling and the local magnetic contributions of neighbouring atoms on T1 and T2 at room temperature remain substantial challenges to practical spintronics. Here, we report a record-high conduction electron T1=T2 of 175 ns at 300 K in 37 nm +/- 7 nm carbon spheres, which exceeds by far the highest values observed for any conducting solid state material of comparable size. The long T1=T2 is due to quantum confinement effects, to the intrinsically weak spin-orbit coupling of carbon, and to the protecting nature of the outer shells of the inner spins from the influences of environmental disturbances. Following the observation of spin polarization by electron spin resonance, we controlled the quantum state of the electron spin by applying short bursts of an oscillating magnetic field and observed coherent oscillations of the spin state. These results demonstrate the feasibility of operating electron spins in conducting carbon nanospheres as quantum bits at room temperature.
References in corpus (20)
- Electric Field Effect in Atomically Thin Carbon Films
- Raman spectroscopy as a versatile tool for studying the properties of graphene
- Quantum Computation with Quantum Dots
- The structure of suspended graphene sheets
- Silicon Quantum Electronics
- Spin-orbit coupling in curved graphene, fullerenes, nanotubes, and nanotube caps
- Electronic transport in polycrystalline graphene
- Will spin-relaxation times in molecular magnets permit quantum information processing?
- Solid state quantum memory using the 31P nuclear spin
- All-electric all-semiconductor spin field effect transistors
- Low-temperature spin relaxation in n-type GaAs
- Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting
- Bang-bang control of fullerene qubits using ultra-fast phase gates
- Dispersive Readout of a Few-Electron Double Quantum Dot with Fast rf Gate-Sensors
- Room-Temperature Electron Spin Transport in a Highly Doped Si Channel
- Nanosecond spin lifetimes in single- and few-layer graphene-hBN heterostructures at room temperature
- Electrical spin injection and transport in Germanium
- Relaxation and Dephasing in a Two-electron 13C Nanotube Double Quantum Dot
- A unified theory of spin-relaxation due to spin-orbit coupling in metals and semiconductors
- Microwave frequency modulation in continuous-wave far-infrared ESR utilizing a quasioptical reflection bridge
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