High fidelity resonant gating of a silicon based quantum dot hybrid qubit

Abstract

Isolated spins in semiconductors provide a promising platform to explore quantum mechanical coherence and develop engineered quantum systems. Silicon has attracted great interest as a host material for developing spin qubits because of its weak spin-orbit coupling and hyperfine interaction, and several architectures based on gate defined quantum dots have been proposed and demonstrated experimentally. Recently, a quantum dot hybrid qubit formed by three electrons in double quantum dot was proposed, and non-adiabatic pulsed-gate operation was implemented experimentally, demonstrating simple and fast electrical manipulations of spin states with a promising ratio of coherence time to manipulation time. However, the overall gate fidelity of the pulse-gated hybrid qubit is limited by relatively fast dephasing due to charge noise during one of the two required gate operations. Here we perform the first microwave-driven gate operations of a quantum dot hybrid qubit, avoiding entirely the regime in which it is most sensitive to charge noise. Resonant detuning modulation along with phase control of the microwaves enables a pi rotation time of less than 5 ns (50 ps) around X(Z)-axis with high fidelities > 93 (96) %. We also implement Hahn echo and Carr-Purcell (CP) dynamic decoupling sequences with which we demonstrate a coherence time of over 150 ns. We further discuss a pathway to improve gate fidelity to above 99 %, exceeding the threshold for surface code based quantum error correction.

9 pages and 6 figures including supplementary information

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Cited by in corpus (64)

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• Three-electron spin qubits
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• Extending the coherence of a quantum dot hybrid qubit
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• Strong electron-electron interactions in Si/SiGe quantum dots
• State-conditional coherent charge qubit oscillations in a Si/SiGe quadruple quantum dot
• An electrically driven spin qubit based on valley mixing
• Randomized benchmarking of barrier versus tilt control of a singlet-triplet qubit
• High Fidelity Single-Shot Singlet-Triplet Readout of Precision Placed Donors in Silicon
• Neural-network-designed pulse sequences for robust control of singlet-triplet qubits
• The critical role of substrate disorder in valley splitting in Si quantum wells
• Is all-electrical silicon quantum computing feasible in the long term?
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• Readout Of Singlet-Triplet Qubits At Large Magnetic Field Gradients
• Crosstalk error correction through dynamical decoupling of single-qubit gates in capacitively coupled singlet-triplet semiconductor spin qubits
• Achieving High Fidelity Single Qubit Gates in a Strongly Driven Silicon Quantum Dot Hybrid Qubit
• Single-shot readout of a driven hybrid qubit in a GaAs double quantum dot
• Effects of Interface Steps on the Valley Orbit coupling in a Si/SiGe quantum dot
• Ray-based framework for state identification in quantum dot devices
• Spin blockade and coherent dynamics of high-spin states in a three-electron double quantum dot
• Adiabatic two-qubit gates in capacitively coupled quantum dot hybrid qubits
• Noise filtering of composite pulses for singlet-triplet qubits
• High-fidelity single-qubit gates in a strongly driven quantum dot hybrid qubit with $1/f$ charge noise
• Environmental noise effects on entanglement fidelity of exchange-coupled semiconductor spin qubits
• Signatures of atomic-scale structure in the energy dispersion and coherence of a Si quantum-dot qubit
• CMOS Quantum Computing: Toward A Quantum Computer System-on-Chip
• Enhancing the dipolar coupling of a $S$-$T_0$ qubit with a transverse sweet spot
• Long-Range Interaction between Charge and Spin Qubits in Quantum Dots
• Fast pulse sequences for dynamically corrected gates in single-triplet qubits
• Fast control of semiconductor qubits beyond the rotating-wave approximation
• High-Fidelity Entangling Gates for Quantum-Dot Hybrid Qubits Based on Exchange Interactions
• Molecular formations and spectra due to electron correlations in three-electron hybrid double-well qubits
• Negative exchange interactions in coupled few-electron quantum dots
• A tunable hybrid qubit in a triple quantum dot
• High fidelity ac gate operations of the quantum dot hybrid qubit
• Wigner molecules and hybrid qubits
• Phonon-assisted relaxation and decoherence of singlet-triplet qubits in Si/SiGe quantum dots
• Interplay of exchange and superexchange in triple quantum dots
• Error correction for gate operations in systems of exchange-coupled singlet-triplet qubits in double quantum dots
• Gate fidelity comparison in semiconducting spin qubit implementations affected by control noises
• Characterization of a gate-defined double quantum dot in a Si/SiGe nanomembrane
• Quadrupolar interactions between acceptor pairs in p-doped semiconductors
• Coherence time analysis in semiconducting hybrid qubit under realistic experimental conditions
• Wigner-molecularization-enabled dynamic nuclear field programming
• Phonon-induced relaxation and decoherence times of the hybrid qubit in silicon quantum dots
• Designing arbitrary single-axis rotations robust against perpendicular time-dependent noise
• Controlled-NOT gate sequences for mixed spin qubit architectures in a noisy environment
• Heitler-London model for acceptor-acceptor interactions in doped semiconductors
• Long-range two-hybrid-qubit gates mediated by a microwave cavity with red sidebands
• Simulation of Coupling Strength of Capacitively Coupled Singlet-Triplet Qubits
• Semiconducting double-dot exchange-only qubit dynamics in presence of magnetic and charge noises
• Readout using Resonant Tunneling in Silicon Spin Qubits
• On the robustness of the hybrid qubit computational gates through simulated randomized benchmarking protocols
• Two-qubit sweet spots for capacitively coupled exchange-only spin qubits
• Single-shot latched readout of a quantum dot qubit using barrier gate pulsing
• The role of antisymmetric orbitals and electron-electron interactions on the two-particle spin and valley blockade in graphene double quantum dots
• Passive stabilization of hole spin qubit using optical Stark effect
• Non-adiabatic quantum control of valley states in silicon