High fidelity ac gate operations of the quantum dot hybrid qubit

Abstract

Semiconductor quantum dots in silicon are promising qubits because of long spin coherence times and their potential for scalability. However, such qubits with complete electrical control and fidelities above the threshold for quantum error correction have not yet been achieved. We show theoretically that the threshold fidelity can be achieved with ac gate operation of the quantum dot hybrid qubit. Formed by three electrons in a double dot, this qubit is electrically controlled, does not require magnetic fields, and runs at GHz gate speeds. We analyze the decoherence caused by 1/f charge noise in this qubit, find the parameter regime for tunnel couplings and detuning that minimize the charge noise dependence in the qubit frequency, and determine the optimal working points for ac gate operations that drive the detuning and tunnel coupling.

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Cited by in corpus (12)

• Extending the coherence of a quantum dot hybrid qubit
• Achieving High-Fidelity Single-Qubit Gates in a Strongly Driven Charge Qubit with $1/f$ Charge Noise
• Quantum efficiency of a microwave photon detector based on a double quantum dot
• Is all-electrical silicon quantum computing feasible in the long term?
• Achieving High Fidelity Single Qubit Gates in a Strongly Driven Silicon Quantum Dot Hybrid Qubit
• Adiabatic two-qubit gates in capacitively coupled quantum dot hybrid qubits
• High-fidelity single-qubit gates in a strongly driven quantum dot hybrid qubit with $1/f$ charge noise
• Signatures of atomic-scale structure in the energy dispersion and coherence of a Si quantum-dot qubit
• High-Fidelity Entangling Gates for Quantum-Dot Hybrid Qubits Based on Exchange Interactions
• Suppression of leakage for a charge quadrupole qubit in triangular geometry
• Implementation of geometric quantum gates on microwave-driven semiconductor charge qubits
• Tunable charge qubit based on barrier-controlled triple quantum dots