A theoretical investigation into the microwave spectroscopy of a phosphorus-donor charge-qubit in silicon: Coherent control in the Si:P quantum computer architecture

Abstract

We present a theoretical analysis of a microwave spectroscopy experiment on a charge qubit defined by a P${}_2^{+}$ donor pair in silicon, for which we calculate Hamiltonian parameters using the effective-mass theory of shallow donors. We solve the master equation of the driven system in a dissipative environment to predict experimental outcomes. We describe how to calculate physical parameters of the system from such experimental results, including the dephasing time, $T_2$, and the ratio of the resonant Rabi frequency to the relaxation rate. Finally we calculate probability distributions for experimentally relevant system parameters for a particular fabrication regime.

References in corpus (11)

• Manipulation of a single charge in a double quantum dot
• Charge-qubit operation of an isolated double quantum dot
• Spin transport and quasi 2D architectures for donor-based quantum computing
• Charge fluctuation induced dephasing of exchange coupled spin qubits
• Theory of the Stark Effect for P donors in Si
• Charge qubits in semiconductor quantum computer architectures: Tunnel coupling and decoherence
• Electric field driven donor-based charge qubits in semiconductors
• Resonant-pulse operations on the buried donor charge qubits in semiconductors
• Optically induced spin to charge transduction in donor spin read-out
• Qubits as Spectrometers of Quantum Noise
• Continuous measurement of a microwave-driven solid state qubit

Cited by in corpus (2)

• Silicon Quantum Electronics
• Coherent Tunneling Adiabatic Passage with the Alternating Coupling Scheme