Single-charge occupation in ambipolar quantum dots

Abstract

We demonstrate single-charge occupation of ambipolar quantum dots in silicon via charge sensing. We have fabricated ambipolar quantum dot (QD) devices in a silicon metal-oxide-semiconductor heterostructure comprising a single-electron transistor next to a single-hole transistor. Both QDs can be tuned to simultaneously sense charge transitions of the other. We further detect the few-electron and few-hole regimes in the QDs of our ambipolar device by active charge sensing.

arXiv comment13 pages, 4 figures

References in corpus (38)

• Quantum Computation with Quantum Dots
• Spins in few-electron quantum dots
• Electron transport through double quantum dots
• Single-shot read-out of an individual electron spin in a quantum dot
• Driven coherent oscillations of a single electron spin in a quantum dot
• Silicon Quantum Electronics
• Coherent control of a single electron spin with electric fields
• An addressable quantum dot qubit with fault-tolerant control fidelity
• A single-atom electron spin qubit in silicon
• Single-shot readout of an electron spin in silicon
• Electron spin coherence exceeding seconds in high purity silicon
• Storing quantum information for 30 seconds in a nanoelectronic device
• A CMOS silicon spin qubit
• Electrical control of a long-lived spin qubit in a Si/SiGe quantum dot
• Charge noise and spin noise in a semiconductor quantum device
• Electric Dipole Induced Spin Resonance in Quantum Dots
• Ge hole spin qubit
• Coherent control and suppressed nuclear feedback of a single quantum dot hole qubit
• Two-axis control of a singlet-triplet qubit with an integrated micromagnet
• Coherent Single Charge Transport in Molecular-Scale Silicon Nanowire Transistors
• Electrical control over single hole spins in nanowire quantum dots
• Spin-Orbit Mediated Control of Spin Qubits
• Spin relaxation and anticrossing in quantum dots: Rashba versus Dresselhaus spin-orbit coupling
• Gate-reflectometry dispersive readout and coherent control of a spin qubit in silicon
• Circuit QED with Hole-Spin Qubits in Ge/Si Nanowire Quantum Dots
• Electron spin resonance and spin-valley physics in a silicon double quantum dot
• Hyperfine-phonon spin relaxation in a single-electron GaAs quantum dot
• Spin filling and orbital structure of the first six holes in a silicon metal-oxide-semiconductor quantum dot
• Dynamically controlled charge sensing of a few-electron silicon quantum dot
• Spin Orbit Mediated Manipulation of Heavy Hole Spin Qubit in Gated Semiconductor Nanodevices
• Printed Circuit Board Metal Powder Filters for Low Electron Temperatures
• Ambipolar quantum dots in undoped silicon fin field-effect transistors
• Charge Sensing in Intrinsic Silicon Quantum Dots
• Palladium gates for reproducible quantum dots in silicon
• A fabrication guide for planar silicon quantum dot heterostructures
• Passivation and characterization of charge defects in ambipolar silicon quantum dots
• Ambipolar quantum dots in intrinsic silicon
• Single-electron charge sensing in self-assembled quantum dots

Cited by in corpus (6)

• Particle-hole symmetry protects spin-valley blockade in graphene quantum dots
• A singlet-triplet hole-spin qubit in MOS silicon
• Charge-noise induced dephasing in silicon hole-spin qubits
• Dispersive readout of reconfigurable ambipolar quantum dots in a silicon-on-insulator nanowire
• Combining n-MOS Charge Sensing with p-MOS Silicon Hole Double Quantum Dots in a CMOS platform
• An ambipolar single-charge pump in silicon