Single-charge occupation in ambipolar quantum dots

Abstract

We demonstrate single-charge occupation of ambipolar quantum dots in silicon via charge sensing. We have fabricated ambipolar quantum dot (QD) devices in a silicon metal-oxide-semiconductor heterostructure comprising a single-electron transistor next to a single-hole transistor. Both QDs can be tuned to simultaneously sense charge transitions of the other. We further detect the few-electron and few-hole regimes in the QDs of our ambipolar device by active charge sensing.

13 pages, 4 figures

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• Coherent control of a single electron spin with electric fields
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Cited by in corpus (6)

• Particle-hole symmetry protects spin-valley blockade in graphene quantum dots
• A singlet-triplet hole-spin qubit in MOS silicon
• Charge-noise induced dephasing in silicon hole-spin qubits
• Dispersive readout of reconfigurable ambipolar quantum dots in a silicon-on-insulator nanowire
• Combining n-MOS Charge Sensing with p-MOS Silicon Hole Double Quantum Dots in a CMOS platform
• An ambipolar single-charge pump in silicon