Nuclear spin decoherence of neutral P donors in silicon: Effect of environmental Si nuclei
arXiv:1508.05362 · doi:10.1103/PhysRevB.93.161202
Abstract
Spectral diffusion arising from Si nuclear spin flip-flops, known to be a primary source of electron spin decoherence in silicon, is also predicted to limit the coherence times of neutral donor nuclear spins in silicon. Here, the impact of this mechanism on P nuclear spin coherence is measured as a function of Si concentration using X-band pulsed electron nuclear double resonance (ENDOR). The P nuclear spin echo decays show that decoherence is controlled by Si flip-flops resulting in both fast (exponential) and slow (non-exponential) spectral diffusion processes. The decay times span a range from 100 ms in crystals containing 50% Si to 3 s in crystals containing 1% Si. These nuclear spin echo decay times for neutral donors are orders of magnitude longer than those reported for ionized donors in natural silicon. The electron spin of the neutral donors `protects' the donor nuclear spins by suppressing Si flip-flops within a `frozen core', as a result of the detuning of the Si spins caused by their hyperfine coupling to the electron spin.
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