Tunneling statistics for analysis of spin-readout fidelity

Abstract

We investigate spin and charge dynamics of a quantum dot of phosphorus atoms coupled to a radio-frequency single-electron transistor (rf-SET) using full counting statistics. We show how the magnetic field plays a role in determining the bunching or anti-bunching tunnelling statistics of the donor dot and SET system. Using the counting statistics we show how to determine the lowest magnetic field where spin-readout is possible. We then show how such a measurement can be used to investigate and optimise single electron spin-readout fidelity.

11 pages, 6 figures

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Cited by in corpus (6)

• Photon emission statistics of a driven microwave cavity
• Real-Time Detection and Control of Correlated Charge Tunneling in a Quantum Dot
• Nonlocality of Majorana bound states revealed by electron waiting times in a topological Andreev interferometer
• Spin-qubit readout analysis based on a hidden Markov model
• Threshold-independent method for single-shot readout of spin qubits in semiconductor quantum dots
• Revealing the internal spin dynamics in a double quantum dot by periodic voltage modulation