Tunneling statistics for analysis of spin-readout fidelity
arXiv:1710.02243 · doi:10.1103/PhysRevApplied.8.034019
Abstract
We investigate spin and charge dynamics of a quantum dot of phosphorus atoms coupled to a radio-frequency single-electron transistor (rf-SET) using full counting statistics. We show how the magnetic field plays a role in determining the bunching or anti-bunching tunnelling statistics of the donor dot and SET system. Using the counting statistics we show how to determine the lowest magnetic field where spin-readout is possible. We then show how such a measurement can be used to investigate and optimise single electron spin-readout fidelity.
arXiv comment11 pages, 6 figures
References in corpus (24)
- Spins in few-electron quantum dots
- Single-shot read-out of an individual electron spin in a quantum dot
- Silicon Quantum Electronics
- Single-shot readout of an electron spin in silicon
- Counting statistics of single-electron transport in a quantum dot
- Full Counting Statistics of Charge Transfer in Coulomb Blockade Systems
- Universal oscillations in counting statistics
- Counting Statistics of Non-Markovian Quantum Stochastic Processes
- Fast sensing of double-dot charge arrangement and spin state with an rf sensor quantum dot
- Full counting statistics of super-Poissonian shot noise in multi-level quantum dots
- Full Counting Statistics in Strongly Interacting Systems: Non-Markovian Effects
- Full counting statistics of a general quantum mechanical variable
- Counting statistics of transport through Coulomb blockade nanostructures: High-order cumulants and non-Markovian effects
- Single-Spin CCD
- A silicon-based surface code quantum computer
- Charge sensitivity of radio frequency single-electron transistor (RF-SET)
- Bunching and anti-bunching in electronic transport
- Inverse counting statistics for stochastic and open quantum systems: the characteristic polynomial approach
- Full counting statistics and shot noise of cotunneling in quantum dots and single-molecule transistors
- Dephasing-assisted transport in linear triple quantum dots
- High-order cumulants in the counting statistics of asymmetric quantum dots
- Radio frequency reflectometry and charge sensing of a precision placed donor in silicon
- Detection and measurement of spin-dependent dynamics in random telegraph signals
- Mapping the Chemical Potential Landscape of a Triple Quantum Dot
Cited by in corpus (17)
- Benchmarking high fidelity single-shot readout of semiconductor qubits
- Electron Waiting Times of a Cooper Pair Splitter
- Photon counting statistics of a microwave cavity
- Noise and full counting statistics of a Cooper pair splitter
- Current cross-correlations and waiting time distributions in Andreev transport through Cooper pair splitters based on triple quantum dots
- Controlled emission time statistics of a dynamic single-electron transistor
- Electron Waiting Times in a Strongly Interacting Quantum Dot: Interaction Effects and Higher-Order Tunneling Processes
- Real-time detection of every Auger recombination in a self-assembled quantum dot
- Electron waiting times in hybrid junctions with topological superconductors
- Time-Domain Spectroscopy of Mesoscopic Conductors Using Voltage Pulses
- Waiting time distributions in a two-level fluctuator coupled to a superconducting charge detector
- Photon emission statistics of a driven microwave cavity
- Nonlocality of Majorana bound states revealed by electron waiting times in a topological Andreev interferometer
- Real-Time Detection and Control of Correlated Charge Tunneling in a Quantum Dot
- Threshold-independent method for single-shot readout of spin qubits in semiconductor quantum dots
- Spin-qubit readout analysis based on a hidden Markov model
- Revealing the internal spin dynamics in a double quantum dot by periodic voltage modulation