72 citations · 409 across the 17 of their papers we have counts for
17 papers
An 11-qubit atom processor in silicon
Hermann Edlbauer, Junliang Wang, A. M. Saffat-Ee Huq +12
Phosphorus atoms in silicon are an outstanding platform for quantum computing as their nuclear spins exhibit coherence time over seconds. By placing multiple phosphorus atoms withi…
Roadmap on Atomic-scale Semiconductor Devices
Steven R. Schofield, Andrew J. Fisher, Eran Ginossar +47
Spin states in semiconductors provide exceptionally stable and noise-resistant environments for qubits, positioning them as optimal candidates for reliable quantum computing techno…
Noise Correlations in a 1D Silicon Spin Qubit Array
M. B. Donnelly, J. Rowlands, L. Kranz +9
Correlated noise across multi-qubit architectures is known to be highly detrimental to the operation of error correcting codes and the long-term feasibility of quantum processors.…
Grover's algorithm in a four-qubit silicon processor above the fault-tolerant threshold
Ian Thorvaldson, Dean Poulos, Christian M. Moehle +15
Spin qubits in silicon are strong contenders for realizing a practical quantum computer. This technology has made remarkable progress with the demonstration of single and two-qubit…
3-Dimensional Tuning of an Atomically Defined Silicon Tunnel Junction
Matthew B. Donnelly, Joris G. Keizer, Yousun Chung +1
A requirement for quantum information processors is the in-situ tunability of the tunnel rates and the exchange interaction energy within the device. The large energy level separat…
Two-Electron Spin Correlations in Precision Placed Donors in Silicon
M. A. Broome, S. K. Gorman, M. G. House +8
Substitutional donor atoms in silicon are promising qubits for quantum computation with extremely long relaxation and dephasing times demonstrated. One of the critical challenges o…
Addressable electron spin resonance using donors and donor molecules in silicon
Samuel J. Hile, Lukas Fricke, Matthew G. House +8
Phosphorus donor impurities in silicon are a promising candidate for solid-state quantum computing due to their exceptionally long coherence times and high fidelities. However, ind…
Singlet-triplet minus mixing and relaxation lifetimes in a double donor dot
S. K. Gorman, M. A. Broome, M. G. House +6
We measure singlet-triplet mixing in a precision fabricated double donor dot comprising of 2 and 1 phosphorus atoms separated by nm. We identify singlet and triplet-minu…
High Fidelity Single-Shot Singlet-Triplet Readout of Precision Placed Donors in Silicon
M. A. Broome, T. F. Watson, D. Keith +6
In this work we perform direct single-shot readout of the singlet-triplet states in exchange coupled electrons confined to precision placed donor atoms in silicon. Our method takes…
Tunneling statistics for analysis of spin-readout fidelity
Samuel K. Gorman, Yu He, Matthew G. House +6
We investigate spin and charge dynamics of a quantum dot of phosphorus atoms coupled to a radio-frequency single-electron transistor (rf-SET) using full counting statistics. We sho…
Mapping the Chemical Potential Landscape of a Triple Quantum Dot
M. A. Broome, S. K. Gorman, J. G. Keizer +4
We investigate the non-equilibrium charge dynamics of a triple quantum dot and demonstrate how electron transport through these systems can give rise to non-trivial tunnelling path…
Extracting inter-dot tunnel couplings between few donor quantum dots in silicon
Samuel K. Gorman, Matthew A. Broome, Joris G. Keizer +4
The long term scaling prospects for solid-state quantum computing architectures relies heavily on the ability to simply and reliably measure and control the coherent electron inter…
Single-charge detection by an atomic precision tunnel junction
M. G. House, E. Peretz, J. G. Keizer +2
We demonstrate sensitive detection of single charges using a planar tunnel junction 8.5nm wide and 17.2nm long defined by an atomically precise phosphorus doping profile in silicon…
Highly Non-linear Excitonic Zeeman Spin-Splitting in Composition-Engineered Artificial Atoms
V. Jovanov, T. Eissfeller, S. Kapfinger +8
Non-linear Zeeman splitting of neutral excitons is observed in composition engineered In(x)Ga(1-x)As self-assembled quantum dots and its microscopic origin is explained. Eight-band…
Shape control of QDs studied by cross-sectional scanning tunneling microscopy
J. G. Keizer, M. Bozkurt, J. Bocquel +12
In this cross-sectional scanning tunneling microscopy study we investigated various techniques to control the shape of self-assembled quantum dots (QDs) and wetting layers (WLs). T…
Composition profiling InAs quantum dots and wetting layers by atom probe tomography and cross-sectional scanning tunnelling microscopy
A. D. Giddings, J. G. Keizer, M. Hara +4
This study compares cross-sectional scanning tunnelling microscopy (XSTM) and atom probe tomography (APT). We use epitaxially grown self-assembled InAs quantum dots (QDs) in GaAs a…
Strong electrically tunable exciton g-factors in an individual quantum dots due to hole orbital angular momentum quenching
V. Jovanov, T. Eissfeller, S. Kapfinger +4
Strong electrically tunable exciton g-factors are observed in individual (Ga)InAs self-assembled quantum dots and the microscopic origin of the effect is explained. Realistic eight…