Electrostically defined few-electron double quantum dot in silicon

Abstract

A few-electron double quantum dot was fabricated using metal-oxide-semiconductor(MOS)-compatible technology and low-temperature transport measurements were performed to study the energy spectrum of the device. The double dot structure is electrically tunable, enabling the inter-dot coupling to be adjusted over a wide range, as observed in the charge stability diagram. Resonant single-electron tunneling through ground and excited states of the double dot was clearly observed in bias spectroscopy measurements.

4 pages, 3 figures, accepted for Applied Physics Letters

References in corpus (11)

• Quantum Computation with Quantum Dots
• Electron transport through double quantum dots
• Driven coherent oscillations of a single electron spin in a quantum dot
• Electron Cotunneling in a Semiconductor Quantum Dot
• Suppressing Spin Qubit Dephasing by Nuclear State Preparation
• Pauli-Spin-Blockade Transport through a Silicon Double Quantum Dot
• Coherence of Spin Qubits in Silicon
• Decoherence of electron spin qubits in Si-based quantum computers
• A single-electron inverter
• A gate-defined silicon quantum dot molecule
• Few-electron quantum dots for quantum computing

Cited by in corpus (34)

• Silicon Quantum Electronics
• Low-frequency charge noise in Si/SiGe quantum dots
• A Reconfigurable Gate Architecture for Si/SiGe Quantum Dots
• Interface roughness, valley-orbit coupling and valley manipulation in quantum dots
• Quantum Decoherence of the Central Spin in a Sparse System of Dipolar Coupled Spins
• Exchange coupling in silicon quantum dots: Theoretical considerations for quantum computation
• Observation of the single-electron regime in a highly tunable silicon quantum dot
• Quantum dot spin qubits in Silicon: Multivalley physics
• Magnetic field dependence of Pauli spin blockade: a window into the sources of spin relaxation in silicon quantum dots
• Dynamically controlled charge sensing of a few-electron silicon quantum dot
• Theory of Single Electron Spin Relaxation in Si/SiGe Lateral Coupled Quantum Dots
• Single-electron shuttle based on a silicon quantum dot
• Ambipolar quantum dots in undoped silicon fin field-effect transistors
• Fabrication process and failure analysis for robust quantum dots in silicon
• Palladium gates for reproducible quantum dots in silicon
• Charge Offset Stability in Si Single Electron Devices with Al Gates
• Single Hole Transport in a Silicon Metal-Oxide-Semiconductor Quantum Dot
• Noise-compensating pulses for electrostatically controlled silicon spin qubits
• Passivation and characterization of charge defects in ambipolar silicon quantum dots
• Double quantum dot with tunable coupling in an enhancement-mode silicon metal-oxide semiconductor device with lateral geometry
• Interferometry using spatial adiabatic passage in quantum dot networks
• Electron tunnel rates in a donor-silicon single electron transistor hybrid
• Electrostatically defined Quantum Dots in a Si/SiGe Heterostructure
• Coherent electrical rotations of valley states in Si quantum dots using the phase of the valley-orbit coupling
• A high-sensitivity charge sensor for silicon qubits above one kelvin
• Robust energy selective tunneling readout of singlet triplet qubits under large magnetic field gradient
• Singlet-triplet relaxation in SiGe/Si/SiGe double quantum dots
• Implications of Electronics Constraints for Solid-State Quantum Error Correction and Quantum Circuit Failure Probability
• Overlapping-gate architecture for silicon Hall bar MOSFET devices in the low electron density regime
• Spatially-resolved decoherence of donor spins in silicon strained by a metallic electrode
• Magnetometry of micro-magnets with electrostatically defined Hall bars
• A 2x2 quantum dot array in silicon with fully tuneable pairwise interdot coupling
• Simulating Capacitances to Silicon Quantum Dots: Breakdown of the Parallel Plate Capacitor Model
• Electron transport in gated InGaAs and InAsP quantum well wires in selectively-grown InP ridge structures