Overlapping-gate architecture for silicon Hall bar MOSFET devices in the low electron density regime

Abstract

We report the fabrication and study of Hall bar MOSFET devices in which an overlapping-gate architecture allows four-terminal measurements of low-density 2D electron systems, while maintaining a high density at the ohmic contacts. Comparison with devices made using a standard single gate show that measurements can be performed at much lower densities and higher channel resistances, despite a reduced peak mobility. We also observe a voltage threshold shift which we attribute to negative oxide charge, injected during electron-beam lithography processing.

4 pages, 4 figures, submitted for Applied Physics Letters

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Cited by in corpus (3)

• A flexible design platform for Si/SiGe exchange-only qubits with low disorder
• Triple-top-gate technique for studying the strongly interacting 2D electron systems in heterostructures
• Overlapping-gate architecture for silicon Hall bar MOSFET devices in the low electron density and high magnetic field regime