Overlapping-gate architecture for silicon Hall bar MOSFET devices in the low electron density regime

Abstract

We report the fabrication and study of Hall bar MOSFET devices in which an overlapping-gate architecture allows four-terminal measurements of low-density 2D electron systems, while maintaining a high density at the ohmic contacts. Comparison with devices made using a standard single gate show that measurements can be performed at much lower densities and higher channel resistances, despite a reduced peak mobility. We also observe a voltage threshold shift which we attribute to negative oxide charge, injected during electron-beam lithography processing.

4 pages, 4 figures, submitted for Applied Physics Letters

References in corpus (4)

• Electrostically defined few-electron double quantum dot in silicon
• Broadband electrically detected magnetic resonance of phosphorus donors in a silicon field-effect transistor
• The effect of low-energy ion-implantation on the electrical transport properties of Si-SiO2 MOSFETs
• Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport