125 citations · 157 across the 6 of their papers we have counts for
6 papers
Optical and electronic properties of sub-surface conducting layers in diamond created by MeV B-implantation at elevated temperatures
L. H. Willems van Beveren, R. Liu, H. Bowers +4
Boron implantation with in-situ dynamic annealing is used to produce highly conductive sub-surface layers in type IIa (100) diamond plates for the search of a superconducting phase…
Development of nanowire devices with quantum functionalities
Michael Stuiber, Laurens Willems van Beveren, Brett Johnson +5
Silicon has dominated the microelectronics industry for the last 50 years. With its zero nuclear spin isotope (28Si) and low spin orbit coupling, it is believed that silicon can be…
Overlapping-gate architecture for silicon Hall bar MOSFET devices in the low electron density and high magnetic field regime
Laurens H. Willems Van Beveren, Kuan Y. Tan, Nai-Shyan Lai +3
A common issue in low temperature measurements of enhancement-mode metal-oxide-semiconductor (MOS) field-effect transistors (FETs) in the low electron density regime is the high co…
Overlapping-gate architecture for silicon Hall bar MOSFET devices in the low electron density regime
Laurens H. Willems van Beveren, Kuan Y. Tan, Nai-Shyan Lai +2
We report the fabrication and study of Hall bar MOSFET devices in which an overlapping-gate architecture allows four-terminal measurements of low-density 2D electron systems, while…
Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport
B. C. Johnson, J. C. McCallum, L. H. Willems van Beveren +1
A deep level transient spectroscopy (DLTS) study of defects created by low-fluence, low-energy ion implantation for development of ion-implanted silicon field-effect transistors fo…
Experimental signature of phonon-mediated spin relaxation
T. Meunier, I. T. Vink, L. H. Willems van Beveren +7
We observe an experimental signature of the role of the phonons in spin relaxation between triplet and singlet states in a two-electron quantum dot. Using both the external magneti…