Overlapping-gate architecture for silicon Hall bar MOSFET devices in the low electron density and high magnetic field regime

Laurens H. Willems Van Beveren, Kuan Y. Tan, Nai-Shyan Lai +3

A common issue in low temperature measurements of enhancement-mode metal-oxide-semiconductor (MOS) field-effect transistors (FETs) in the low electron density regime is the high co…