125 citations · 157 across the 6 of their papers we have counts for
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cond-mat.mes-hall2010★ 10 cited
Overlapping-gate architecture for silicon Hall bar MOSFET devices in the low electron density regime
Laurens H. Willems van Beveren, Kuan Y. Tan, Nai-Shyan Lai +2
We report the fabrication and study of Hall bar MOSFET devices in which an overlapping-gate architecture allows four-terminal measurements of low-density 2D electron systems, while…
cond-mat.mtrl-sci2010★ 8 cited
Deep level transient spectroscopy study for the development of ion-implanted silicon field-effect transistors for spin-dependent transport
B. C. Johnson, J. C. McCallum, L. H. Willems van Beveren +1
A deep level transient spectroscopy (DLTS) study of defects created by low-fluence, low-energy ion implantation for development of ion-implanted silicon field-effect transistors fo…