activity
20102014
most citedSpin-valley lifetimes in a silicon quantum dot with tunable valley splitting

304 citations · 439 across the 5 of their papers we have counts for

collaborators

8 papers

cond-mat.mes-hall2014★ 31 cited

Charge State Hysteresis in Semiconductor Quantum Dots

C. H. Yang, A. Rossi, N. S. Lai +3

Semiconductor quantum dots provide a two-dimensional analogy for real atoms and show promise for the implementation of scalable quantum computers. Here, we investigate the charge c…

cond-mat.mes-hall2013★ 41 cited

Printed Circuit Board Metal Powder Filters for Low Electron Temperatures

Filipp Mueller, Raymond N. Schouten, Matthias Brauns +6

We report the characterisation of printed circuit boards (PCB) metal powder filters and their influence on the effective electron temperature which is as low as 22 mK for a quantum…

cond-mat.mes-hall2013★ 304 cited

Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting

C. H. Yang, A. Rossi, R. Ruskov +7

Although silicon is a promising material for quantum computation, the degeneracy of the conduction band minima (valleys) must be lifted with a splitting sufficient to ensure format…

cond-mat.mes-hall2012★ 53 cited

Orbital and valley state spectra of a few-electron silicon quantum dot

C. H. Yang, W. H. Lim, N. S. Lai +3

Understanding interactions between orbital and valley quantum states in silicon nanodevices is crucial in assessing the prospects of spin-based qubits. We study the energy spectra…

cond-mat.mes-hall2011

Overlapping-gate architecture for silicon Hall bar MOSFET devices in the low electron density and high magnetic field regime

Laurens H. Willems Van Beveren, Kuan Y. Tan, Nai-Shyan Lai +3

A common issue in low temperature measurements of enhancement-mode metal-oxide-semiconductor (MOS) field-effect transistors (FETs) in the low electron density regime is the high co…

quant-ph2011

Single-electron shuttle based on a silicon quantum dot

K. W. Chan, M. Mottonen, A. Kemppinen +4

We report on single-electron shuttling experiments with a silicon metal-oxide-semiconductor quantum dot at 300 mK. Our system consists of an accumulated electron layer at the Si/Si…