57 citations · 94 across the 6 of their papers we have counts for
6 papers
A TEM study of Si-SiO2 interfaces in silicon nanodevices
Paul Spizzirri, Sergey Rubanov, Eric Gauja +3
The fabrication of micro- and nano-scale silicon electronic devices requires precision lithography and controlled processing to ensure that the electronic properties of the device…
CMOS-Compatible Nanowire Biosensors
Thanh C. Nguyen, Wanzhi Qiu, Matteo Altissimo +3
In this chapter, silicon nanowires that are compatible with CMOS fabrication processes have been described. It has been shown that these nanowires can be functionalized by conjugat…
Electrically Detected Magnetic Resonance Applied to the Study of Near Surface Electron Donors in Silicon
W. D. Hutchison, P. G. Spizzirri, F. Hoehne +1
Electrically detected magnetic resonance (EDMR) is applied to mm size devices with implanted leads and a 50 micron square gap laid down on bulk phosphorus doped silicon. Devices wi…
Nano-Raman spectroscopy of silicon surfaces
P. G. Spizzirri, J. -H. Fang, S. Rubanov +2
Near-field enhanced, nano-Raman spectroscopy has been successfully used to probe the surface chemistry of silicon prepared using standard wafer cleaning and processing techniques.…
ESR studies of ion implanted phosphorus donors near the Si-SiO2 interface
Paul G. Spizzirri, Wayne D. Hutchison, Nikolas Stavrias +4
This work reports an ESR study of low energy, low fluence phosphorus ion implantation into silicon in order to observe the activation of phosphorus donors placed in close proximity…
Electrostically defined few-electron double quantum dot in silicon
W. H. Lim, H. Huebl, L. H. Willems van Beveren +5
A few-electron double quantum dot was fabricated using metal-oxide-semiconductor(MOS)-compatible technology and low-temperature transport measurements were performed to study the e…