Electrostically defined few-electron double quantum dot in silicon

Abstract

A few-electron double quantum dot was fabricated using metal-oxide-semiconductor(MOS)-compatible technology and low-temperature transport measurements were performed to study the energy spectrum of the device. The double dot structure is electrically tunable, enabling the inter-dot coupling to be adjusted over a wide range, as observed in the charge stability diagram. Resonant single-electron tunneling through ground and excited states of the double dot was clearly observed in bias spectroscopy measurements.

4 pages, 3 figures, accepted for Applied Physics Letters

References in corpus (3)

• Driven coherent oscillations of a single electron spin in a quantum dot
• Pauli-Spin-Blockade Transport through a Silicon Double Quantum Dot
• A gate-defined silicon quantum dot molecule

Cited by in corpus (6)

• A Reconfigurable Gate Architecture for Si/SiGe Quantum Dots
• Quantum Decoherence of the Central Spin in a Sparse System of Dipolar Coupled Spins
• Charge Offset Stability in Si Single Electron Devices with Al Gates
• Noise-compensating pulses for electrostatically controlled silicon spin qubits
• Passivation and characterization of charge defects in ambipolar silicon quantum dots
• Overlapping-gate architecture for silicon Hall bar MOSFET devices in the low electron density regime