44 citations · 62 across the 2 of their papers we have counts for
6 papers
The effect of low-energy ion-implantation on the electrical transport properties of Si-SiO2 MOSFETs
D. R. McCamey, M. Francis, J. C. McCallum +3
Using silicon MOSFETs with thin (5nm) thermally grown SiO2 gate dielectrics, we characterize the density of electrically active traps at low-temperature after 16keV phosphorus ion-…
STM characterization of the Si-P heterodimer
N. J. Curson, S. R. Schofield, M. Y. Simmons +3
We use scanning tunneling microscopy (STM) and Auger electron spectroscopy to study the behavior of adsorbed phosphine (PH) on Si(001), as a function of annealing temperature…
Universal behaviour in the floating up of quantum Hall extended states as B -> 0
C. E. Yasin, M. Y. Simmons, A. R. Hamilton +4
We investigate the relationship between the quantum Hall extended states and the apparent B=0 `metal'-insulator transition in extremely low density, high quality two-dimensional n-…
Towards the fabrication of phosphorus qubits for a silicon quantum computer
J. L. O'Brien, S. R. Schofield, M. Y. Simmons +7
The quest to build a quantum computer has been inspired by the recognition of the formidable computational power such a device could offer. In particular silicon-based proposals, u…
Experimental determination of B-T phase diagram of YBa_2Cu_3O_7-d to 150T for B perpendicular to c
J. L. O'Brien, H. Nakagawa, A. S. Dzurak +9
The B-T phase diagram for thin film YBa_2Cu_3O_7-d with B parallel to the superconducting layers has been constructed from GHz transport measurements to 150T. Evidence for a transi…
Ballistic electron transport exceeding 160 microns in an undoped GaAs/AlGaAs FET
G. R. Facer, B. E. Kane, A. S. Dzurak +5
We report measurements of GaAs/AlGaAs undoped field-effect transistors in which two-dimensional electron gases (2DEGs) of exceptional quality and versatility are induced without mo…