activity
19962016
most citedSingle-shot readout of an electron spin in silicon

794 citations · 2.5k across the 34 of their papers we have counts for

collaborators

35 papers

cond-mat.mes-hall2016★ 1 cited

From nanoscale to macroscale: applications of nanotechnology to production of bulk ultra-strong materials

Robert G. Clark

Carbon nanotubes have been famous since their discovery twenty years ago for their remarkable physical properties, from strength a hundred times higher than steel, to electrical cu…

cond-mat.mes-hall2010★ 794 cited

Single-shot readout of an electron spin in silicon

Andrea Morello, Jarryd J. Pla, Floris A. Zwanenburg +12

The size of silicon transistors used in microelectronic devices is shrinking to the level where quantum effects become important. While this presents a significant challenge for th…

cond-mat.mes-hall2009★ 20 cited

Electron tunnel rates in a donor-silicon single electron transistor hybrid

Hans Huebl, Christopher D. Nugroho, Andrea Morello +6

We investigate a hybrid structure consisting of implanted P atoms close to a gate-induced silicon single electron transistor (SiSET). In this configuration, the SiS…

cond-mat.mes-hall2009★ 87 cited

Single Shot Charge Detection Using A Radio-Frequency Quantum Point Contact

M. C. Cassidy, A. S. Dzurak, R. G. Clark +4

We report on charge sensing measurements of a GaAs semiconductor quantum dot device using a radio frequency quantum point contact (rf-QPC). The rf-QPC is fully characterized at 4 K…

cond-mat.mes-hall2009

Transport Spectroscopy of Single Phosphorus Donors in a Silicon Nanoscale Transistor

Kuan Yen Tan, Kok Wai Chan, Mikko Möttönen +8

We have developed nano-scale double-gated field-effect-transistors for the study of electron states and transport properties of single deliberately-implanted phosphorus donors. The…

cond-mat.mes-hall2009★ 57 cited

Electrostically defined few-electron double quantum dot in silicon

W. H. Lim, H. Huebl, L. H. Willems van Beveren +5

A few-electron double quantum dot was fabricated using metal-oxide-semiconductor(MOS)-compatible technology and low-temperature transport measurements were performed to study the e…