44 citations · 62 across the 2 of their papers we have counts for
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cond-mat.mtrl-sci2004★ 18 cited
The effect of low-energy ion-implantation on the electrical transport properties of Si-SiO2 MOSFETs
D. R. McCamey, M. Francis, J. C. McCallum +3
Using silicon MOSFETs with thin (5nm) thermally grown SiO2 gate dielectrics, we characterize the density of electrically active traps at low-temperature after 16keV phosphorus ion-…
cond-mat.mtrl-sci2003★ 44 cited
STM characterization of the Si-P heterodimer
N. J. Curson, S. R. Schofield, M. Y. Simmons +3
We use scanning tunneling microscopy (STM) and Auger electron spectroscopy to study the behavior of adsorbed phosphine (PH) on Si(001), as a function of annealing temperature…