93 citations · 542 across the 13 of their papers we have counts for
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From nanoscale to macroscale: applications of nanotechnology to production of bulk ultra-strong materials
Robert G. Clark
Carbon nanotubes have been famous since their discovery twenty years ago for their remarkable physical properties, from strength a hundred times higher than steel, to electrical cu…
Electrostically defined few-electron double quantum dot in silicon
W. H. Lim, H. Huebl, L. H. Willems van Beveren +5
A few-electron double quantum dot was fabricated using metal-oxide-semiconductor(MOS)-compatible technology and low-temperature transport measurements were performed to study the e…
Architecture for high-sensitivity single-shot readout and control of the electron spin of individual donors in silicon
A. Morello, C. C. Escott, H. Huebl +5
We describe a method to control and detect in single-shot the electron spin state of an individual donor in silicon with greatly enhanced sensitivity. A silicon-based Single-Electr…
Bias spectroscopy and simultaneous SET charge state detection of Si:P double dots
M. Mitic, K. D. Petersson, M. C. Cassidy +7
We report a detailed study of low-temperature (mK) transport properties of a silicon double-dot system fabricated by phosphorous ion implantation. The device under study consists o…
Gate-controlled charge transfer in Si:P double quantum dots
F. E. Hudson, A. J. Ferguson, C. C. Escott +4
We present low temperature charge sensing measurements of nanoscale phosphorus-implanted double-dots in silicon. The implanted phosphorus forms two 50 nm diameter islands with sour…
Ion implanted Si:P double-dot with gate tuneable interdot coupling
V. C. Chan, T. M. Buehler, A. J. Ferguson +6
We report on millikelvin charge sensing measurements of a silicon double-dot system fabricated by phosphorus ion implantation. An aluminum single-electron transistor (SET) is capac…