Controlled single electron transfer between Si:P dots

Abstract

We demonstrate electrical control of Si:P double dots in which the potential is defined by nanoscale phosphorus doped regions. Each dot contains approximately 600 phosphorus atoms and has a diameter close to 30 nm. On application of a differential bias across the dots, electron transfer is observed, using single electron transistors in both dc- and rf-mode as charge detectors. With the possibility to scale the dots down to few and even single atoms these results open the way to a new class of precision-doped quantum dots in silicon.

3 figures, 3 pages

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Cited by in corpus (12)

• Spin transport and quasi 2D architectures for donor-based quantum computing
• Theory of valley-orbit coupling in a Si/SiGe quantum dot
• $T_1$- and $T_2$-spin relaxation time limitations of phosphorous donor electrons near crystalline silicon to silicon dioxide interface defects
• Dynamically controlled charge sensing of a few-electron silicon quantum dot
• Single-electron operation of a silicon-CMOS 2x2 quantum dot array with integrated charge sensing
• Spin-dependent processes at the crystalline Si-SiO_2 interface at high magnetic fields
• Narrow band microwave radiation from a biased single-Cooper-pair transistor
• Impurity conduction in phosphorus-doped buried-channel silicon-on-insulator field-effect transistors
• Bias spectroscopy and simultaneous SET charge state detection of Si:P double dots
• Intrinsic and doped coupled quantum dots created by local modulation of implantation in a silicon nanowire
• Readout of solid-state charge qubits using a single-electron pump
• Quantitative Treatment of Decoherence