164 citations · 365 across the 12 of their papers we have counts for
12 papers
Ion implanted Si:P double-dot with gate tuneable interdot coupling
V. C. Chan, T. M. Buehler, A. J. Ferguson +6
We report on millikelvin charge sensing measurements of a silicon double-dot system fabricated by phosphorus ion implantation. An aluminum single-electron transistor (SET) is capac…
Charge sensing in carbon nanotube quantum dots on microsecond timescales
M. J. Biercuk, D. J. Reilly, T. M. Buehler +4
We report fast, simultaneous charge sensing and transport measurements of gate-defined carbon nanotube quantum dots. Aluminum radio frequency single electron transistors (rf-SETs)…
An ion-implanted silicon single-electron transistor
V. C. Chan, D. R. McCamey, T. M. Buehler +6
We report on the fabrication and electrical characterization at millikelvin temperatures of a novel silicon single-electron transistor (Si-SET). The island and source-drain leads o…
Controlled single electron transfer between Si:P dots
T. M. Buehler, V. Chan, A. J. Ferguson +9
We demonstrate electrical control of Si:P double dots in which the potential is defined by nanoscale phosphorus doped regions. Each dot contains approximately 600 phosphorus atoms…
Direct measurement of the maximum tunnel rate in a radio frequency single electron transistor operated as a microwave mixer
D. J. Reilly, T. M. Buehler
By operating the radio frequency single electron transistor (rf-SET) as a mixer we present measurements in which the RC roll-off of the tunnel junctions is observed at high frequen…
Observing sub-microsecond telegraph noise with the radio frequency single electron transistor
T. M. Buehler, D. J. Reilly, R. P. Starrett +4
Telegraph noise, which originates from the switching of charge between meta-stable trapping sites, becomes increasingly important as device sizes approach the nano-scale. For charg…