20 citations · 21 across the 2 of their papers we have counts for
3 papers · 1 filter
Charge sensing in carbon nanotube quantum dots on microsecond timescales
M. J. Biercuk, D. J. Reilly, T. M. Buehler +4
We report fast, simultaneous charge sensing and transport measurements of gate-defined carbon nanotube quantum dots. Aluminum radio frequency single electron transistors (rf-SETs)…
An ion-implanted silicon single-electron transistor
V. C. Chan, D. R. McCamey, T. M. Buehler +6
We report on the fabrication and electrical characterization at millikelvin temperatures of a novel silicon single-electron transistor (Si-SET). The island and source-drain leads o…
Controlled single electron transfer between Si:P dots
T. M. Buehler, V. Chan, A. J. Ferguson +9
We demonstrate electrical control of Si:P double dots in which the potential is defined by nanoscale phosphorus doped regions. Each dot contains approximately 600 phosphorus atoms…