815 citations · 2.1k across the 25 of their papers we have counts for
26 papers
Scalable quantum current source on commercial CMOS process technology
Ajit Dash, Suyash Pati Tripathi, Dimitrios Georgakopoulos +17
Many quantum technologies require a precise electrical current standard that can only be achieved with expensive cryogenics, or through the secondary standards, such as resistance…
Interplay of Zeeman Splitting and Tunnel Coupling in Coherent Spin Qubit Shuttling
Ssu-Chih Lin, Paul Steinacker, MengKe Feng +11
Spin shuttling offers a promising approach for developing scalable silicon-based quantum processors by addressing the connectivity limitations of quantum dots. In this work, we dem…
A 2x2 quantum dot array in silicon with fully tuneable pairwise interdot coupling
Wee Han Lim, Tuomo Tanttu, Tony Youn +12
Recent advances in semiconductor spin qubits have achieved linear arrays exceeding ten qubits. Moving to two-dimensional (2D) qubit arrays is a critical next step to advance toward…
A singlet-triplet hole-spin qubit in MOS silicon
S. D. Liles, D. J. Halverson, Z. Wang +14
Holes in silicon quantum dots are promising for spin qubit applications due to the strong intrinsic spin-orbit coupling. The spin-orbit coupling produces complex hole-spin dynamics…
Impact of electrostatic crosstalk on spin qubits in dense CMOS quantum dot arrays
Jesus D. Cifuentes, Tuomo Tanttu, Paul Steinacker +20
Quantum processors based on integrated nanoscale silicon spin qubits are a promising platform for highly scalable quantum computation. Current CMOS spin qubit processors consist of…
Methods for transverse and longitudinal spin-photon coupling in silicon quantum dots with intrinsic spin-orbit effect
Kevin S. Guo, MengKe Feng, Jonathan Y. Huang +7
In a full-scale quantum computer with a fault-tolerant architecture, having scalable, long-range interaction between qubits is expected to be a highly valuable resource. One promis…
Improved Single-Shot Qubit Readout Using Twin RF-SET Charge Correlations
Santiago Serrano, MengKe Feng, Wee Han Lim +11
High fidelity qubit readout is critical in order to obtain the thresholds needed to implement quantum error correction protocols and achieve fault-tolerant quantum computing. Large…
Characterizing non-Markovian Quantum Process by Fast Bayesian Tomography
R. Y. Su, J. Y. Huang, N. Dumoulin. Stuyck +15
To push gate performance to levels beyond the thresholds for quantum error correction, it is important to characterize the error sources occurring on quantum gates. However, the ch…
Assessment of error variation in high-fidelity two-qubit gates in silicon
Tuomo Tanttu, Wee Han Lim, Jonathan Y. Huang +24
Achieving high-fidelity entangling operations between qubits consistently is essential for the performance of multi-qubit systems and is a crucial factor in achieving fault-toleran…
Combining n-MOS Charge Sensing with p-MOS Silicon Hole Double Quantum Dots in a CMOS platform
Ik Kyeong Jin, Krittika Kumar, Matthew J. Rendell +7
Holes in silicon quantum dots are receiving significant attention due to their potential as fast, tunable, and scalable qubits in semiconductor quantum circuits. Despite this, chal…
Materials for Silicon Quantum Dots and their Impact on Electron Spin Qubits
Andre Saraiva, Wee Han Lim, Chih Hwan Yang +3
Quantum computers have the potential to efficiently solve problems in logistics, drug and material design, finance, and cybersecurity. However, millions of qubits will be necessary…
Coherent control of electron spin qubits in silicon using a global field
E. Vahapoglu, J. P. Slack-Smith, R. C. C. Leon +13
Silicon spin qubits promise to leverage the extraordinary progress in silicon nanoelectronic device fabrication over the past half century to deliver large-scale quantum processors…
A high-sensitivity charge sensor for silicon qubits above one kelvin
Jonathan Y. Huang, Wee Han Lim, Ross C. C. Leon +6
Recent studies of silicon spin qubits at temperatures above 1 K are encouraging demonstrations that the cooling requirements for solid-state quantum computing can be considerably r…
Single-electron spin resonance in a nanoelectronic device using a global field
E. Vahapoglu, J. P. Slack-Smith, R. C. C. Leon +8
Spin-based silicon quantum electronic circuits offer a scalable platform for quantum computation, combining the manufacturability of semiconductor devices with the long coherence t…
Single-electron operation of a silicon-CMOS 2x2 quantum dot array with integrated charge sensing
Will Gilbert, Andre Saraiva, Wee Han Lim +8
The advanced nanoscale integration available in silicon complementary metal-oxide-semiconductor (CMOS) technology provides a key motivation for its use in spin-based quantum comput…
Charge State Hysteresis in Semiconductor Quantum Dots
C. H. Yang, A. Rossi, N. S. Lai +3
Semiconductor quantum dots provide a two-dimensional analogy for real atoms and show promise for the implementation of scalable quantum computers. Here, we investigate the charge c…
Charge Offset Stability in Si Single Electron Devices with Al Gates
Neil M. Zimmerman, Chih-Hwan Yang, Nai Shyan Lai +2
We report on the charge offset drift (time stability) in Si single electron devices (SEDs) defined with aluminum (Al) gates. The size of the charge offset drift (0.15 ) is inter…
A single-atom electron spin qubit in silicon
Jarryd J. Pla, Kuan Y. Tan, Juan P. Dehollain +5
A single atom is the prototypical quantum system, and a natural candidate for a quantum bit - the elementary unit of a quantum computer. Atoms have been successfully used to store…
High-fidelity readout and control of a nuclear spin qubit in silicon
Jarryd J. Pla, Kuan Y. Tan, Juan P. Dehollain +6
A single nuclear spin holds the promise of being a long-lived quantum bit or quantum memory, with the high fidelities required for fault-tolerant quantum computing. We show here th…
Orbital and valley state spectra of a few-electron silicon quantum dot
C. H. Yang, W. H. Lim, N. S. Lai +3
Understanding interactions between orbital and valley quantum states in silicon nanodevices is crucial in assessing the prospects of spin-based qubits. We study the energy spectra…
Dynamically controlled charge sensing of a few-electron silicon quantum dot
C. H. Yang, W. H. Lim, F. A. Zwanenburg +1
We report charge sensing measurements of a silicon metal-oxide-semiconductor quantum dot using a single-electron transistor as a charge sensor with dynamic feedback control. Using…
Single-electron shuttle based on a silicon quantum dot
K. W. Chan, M. Mottonen, A. Kemppinen +4
We report on single-electron shuttling experiments with a silicon metal-oxide-semiconductor quantum dot at 300 mK. Our system consists of an accumulated electron layer at the Si/Si…
Pauli Spin Blockade in a Highly Tunable Silicon Double Quantum Dot
N. S. Lai, W. H. Lim, C. H. Yang +5
Double quantum dots are convenient solid-state platforms to encode quantum information. Two-electron spin states can be conveniently detected and manipulated using strong quantum s…
Observation of the single-electron regime in a highly tunable silicon quantum dot
W. H. Lim, F. A. Zwanenburg, H. Huebl +4
We report on low-temperature electronic transport measurements of a silicon metal-oxide-semiconductor quantum dot, with independent gate control of electron densities in the leads…