55 citations · 56 across the 2 of their papers we have counts for
2 papers
cond-mat.mes-hall2025★ 1 cited
Holes in silicon are heavier than expected: transport properties of extremely high mobility electrons and holes in silicon MOSFETs
J. P. Wendoloski, J. Hillier, S. D. Liles +17
The quality of the silicon-oxide interface plays a crucial role in fabricating reproducible silicon spin qubits. In this work we characterize interface quality by performing mobili…
cond-mat.mes-hall2011★ 55 cited
Spin filling of valley-orbit states in a silicon quantum dot
W. H. Lim, C. H. Yang, F. A. Zwanenburg +1
We report the demonstration of a low-disorder silicon metal-oxide-semiconductor (Si MOS) quantum dot containing a tunable number of electrons from zero to N=27. The observed evolut…