Spin filling of valley-orbit states in a silicon quantum dot

Abstract

We report the demonstration of a low-disorder silicon metal-oxide-semiconductor (Si MOS) quantum dot containing a tunable number of electrons from zero to N=27. The observed evolution of addition energies with parallel magnetic field reveals the spin filling of electrons into valley-orbit states. We find a splitting of 0.10 meV between the ground and first excited states, consistent with theory and placing a lower bound on the valley splitting. Our results provide optimism for the realization in the near future of spin qubits based on silicon quantum dots.

6 pages, 4 figures, to appear in Nanotechnology

References in corpus (4)

• Valley Polarization in Si(100) at Zero Magnetic Field
• Physical mechanisms of interface-mediated intervalley coupling in Si
• Measurement of valley splitting in high-symmetry Si/SiGe quantum dots
• Extended interface states enhance valley splitting in Si/SiO2

Cited by in corpus (5)

• A Reconfigurable Gate Architecture for Si/SiGe Quantum Dots
• Excited states in bilayer graphene quantum dots
• Detection of a large valley-orbit splitting in silicon with two-donor spectroscopy
• Orbital and valley state spectra of a few-electron silicon quantum dot
• QCAD Simulation and Optimization of Semiconductor Quantum Dots