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Observation of the single-electron regime in a highly tunable silicon quantum dot
W. H. Lim, F. A. Zwanenburg, H. Huebl +4
We report on low-temperature electronic transport measurements of a silicon metal-oxide-semiconductor quantum dot, with independent gate control of electron densities in the leads…
Probe and Control of the Reservoir Density of States in Single-Electron Devices
M. Mottonen, K. Y. Tan, K. W. Chan +11
We present a systematic study of quasi-one-dimensional density of states (DOS) in electron accumulation layers near a Si-SiO2 interface. In the experiments we have employed two con…
Electrostically defined few-electron double quantum dot in silicon
W. H. Lim, H. Huebl, L. H. Willems van Beveren +5
A few-electron double quantum dot was fabricated using metal-oxide-semiconductor(MOS)-compatible technology and low-temperature transport measurements were performed to study the e…