Single-dopant resonance in a single-electron transistor

Abstract

Single dopants in semiconductor nanostructures have been studied in great details recently as they are good candidates for quantum bits, provided they are coupled to a detector. Here we report coupling of a single As donor atom to a single-electron transistor (SET) in a silicon nanowire field-effect transistor. Both capacitive and tunnel coupling are achieved, the latter resulting in a dramatic increase of the conductance through the SET, by up to one order of magnitude. The experimental results are well explained by the rate equations theory developed in parallel with the experiment.

16 pages, 8 figures

References in corpus (6)

• Single-shot readout of an electron spin in silicon
• Transport spectroscopy of a single dopant in a gated silicon nanowire
• Single donor ionization energies in a nanoscale CMOS channel
• A simple and controlled single electron transistor based on doping modulation in silicon nanowires
• Background charges and quantum effects in quantum dots transport spectroscopy
• Electron tunnel rates in a donor-silicon single electron transistor hybrid

Cited by in corpus (12)

• Silicon Quantum Electronics
• Magnetic Field Probing of an SU(4) Kondo Resonance in a Single Atom Transistor
• Pauli Blockade in a Few-Hole PMOS Double Quantum Dot limited by Spin-Orbit Interaction
• Stochastic thermodynamics of a quantum dot coupled to a finite-size reservoir
• Duality for open fermion systems: energy-dependent weak coupling and quantum master equations
• Spatially resolved resonant tunneling on single atoms in silicon
• Defect detection in nano-scale transistors based on radio-frequency reflectometry
• A hybrid double-dot in silicon
• Dopant-controlled single-electron pumping through a metallic island
• Localization effects in the tunnel barriers of phosphorus-doped silicon quantum dots
• Strongly correlated charge transport in silicon MOSFET quantum dots
• Probing a Single Nuclear Spin in a Silicon Single Electron Transistor