A hybrid double-dot in silicon

Abstract

We report electrical measurements of a single arsenic dopant atom in the tunnel-barrier of a silicon SET. As well as performing electrical characterization of the individual dopant, we study series electrical transport through the dopant and SET. We measure the triple points of this hybrid double dot, using simulations to support our results, and show that we can tune the electrostatic coupling between the two sub-systems.

11 pages, 6 figures

References in corpus (11)

• Driven coherent oscillations of a single electron spin in a quantum dot
• Transport spectroscopy of a single dopant in a gated silicon nanowire
• Tunable spin-selective loading of a silicon spin qubit
• Pauli-Spin-Blockade Transport through a Silicon Double Quantum Dot
• Pauli Spin Blockade in a Highly Tunable Silicon Double Quantum Dot
• Pauli spin blockade in undoped Si/SiGe two-electron double quantum dots
• Coherent electron transport by adiabatic passage in an imperfect donor chain
• Electric field reduced charging energies and two-electron bound excited states of single donors in silicon
• Single-dopant resonance in a single-electron transistor
• Lifetime enhanced transport in silicon due to spin and valley blockade
• Lifetime measurements (T1) of electron spins in Si/SiGe quantum dots

Cited by in corpus (6)

• Theory of one and two donors in Silicon
• An Exchange-Coupled Donor Molecule in Silicon
• Charge dynamics and spin blockade in a hybrid double quantum dot in silicon
• Resonant tunneling spectroscopy of valley eigenstates on a hybrid double quantum dot
• 2-dimensional semiconductors pave the way towards dopant based quantum computing
• Evidence of magnetic field quenching of phosphorous-doped silicon quantum dots