Isotope engineering of silicon and diamond for quantum computing and sensing applications

Abstract

Some of the stable isotopes of silicon and carbon have zero nuclear spin, whereas many of the other elements that constitute semiconductors consist entirely of stable isotopes that have nuclear spins. Silicon and diamond crystals composed of nuclear-spin-free stable isotopes (Si-28, Si-30, or C-12) are considered to be ideal host matrixes to place spin quantum bits (qubits) for quntum computing and sensing applications because their coherent properties are not disrupted thanks to the absence of host nuclear spins. The present article describes the state-of-the-art and future perspective of silicon and diamond isotope engineering for development of quantum information processing devices.

arXiv commentPerspective article for MRS Communications. 8 figures

References in corpus (60)

• Advances in Quantum Metrology
• High-sensitivity diamond magnetometer with nanoscale resolution
• Nanometer scale quantum thermometry in a living cell
• Sensing electric fields using single diamond spins
• Silicon Quantum Electronics
• An addressable quantum dot qubit with fault-tolerant control fidelity
• Electron Spin Resonance Transistors for Quantum Computing in Silicon-Germanium Heterostructures
• A single-atom electron spin qubit in silicon
• Observation of coherent oscillation of a single nuclear spin and realization of a two-qubit conditional quantum gate
• A robust, scanning quantum system for nanoscale sensing and imaging
• Electron spin coherence exceeding seconds in high purity silicon
• Storing quantum information for 30 seconds in a nanoelectronic device
• High-fidelity readout and control of a nuclear spin qubit in silicon
• Room temperature entanglement between distant single spins in diamond
• Scalable quantum register based on coupled electron spins in a room temperature solid
• Solid state quantum memory using the 31P nuclear spin
• Fluorescence thermometry enhanced by the quantum coherence of single spins in diamond
• Electron Spin-Relaxation Times of Phosphorus Donors in Silicon
• Room temperature quantum bit storage exceeding 39 minutes using ionized donors in 28-silicon
• Chemical control of the charge state of nitrogen-vacancy centers in diamond
• Magnetic field imaging with NV ensembles
• Surface-induced charge state conversion of nitrogen-vacancy defects in nanodiamonds
• Atomic clock transitions in silicon-based spin qubits
• Sensing remote nuclear spins
• Quantum theory for electron spin decoherence induced by nuclear spin dynamics in semiconductor quantum computer architectures: Spectral diffusion of localized electron spins in the nuclear solid-state environment
• Theory of nuclear induced spectral diffusion: Spin decoherence of phosphorus donors in Si and GaAs quantum dots
• Violation of a Leggett-Garg inequality with ideal non-invasive measurements
• Spin transport and quasi 2D architectures for donor-based quantum computing
• Practical design and simulation of silicon-based quantum dot qubits
• Design and proof of concept for silicon-based quantum dot quantum bits
• Electronic structure of the negatively-charged silicon-vacancy center in diamond
• Coherence of single spins coupled to a nuclear spin bath of varying density
• Perfect alignment and preferential orientation of nitrogen-vacancy centers during CVD growth of diamond on (111) surfaces
• Extending spin coherence times of diamond qubits by high temperature annealing
• Storage of multiple coherent microwave excitations in an electron spin ensemble
• Nanoscale nuclear magnetic resonance with a 1.9-nm-deep nitrogen-vacancy sensor
• Coherence Time of a Solid-State Nuclear Qubit
• Entanglement in a Solid State Spin Ensemble
• Quantum control of proximal spins using nanoscale magnetic resonance imaging
• Coherent Quantum Oscillations in a Silicon Charge Qubit
• Electron spin phase relaxation of phosphorus donors in nuclear spin enriched silicon
• Silicon quantum computation based on magnetic dipolar coupling
• Line Broadening and Decoherence of Electron Spins in Phosphorus-Doped Silicon Due to Environmental 29^Si Nuclear Spins
• Ultimate limits to quantum metrology and the meaning of the Heisenberg limit
• Time-resolved magnetic sensing with electronic spins in diamond
• Continuous dynamical decoupling magnetometry
• Decoherence induced by anisotropic hyperfine interaction in Si spin qubits
• Room Temperature Operation of a Radiofrequency Diamond Magnetometer near the Shot Noise Limit
• Geometric Phase Gates with Adiabatic Control in Electron Spin Resonance
• Detection of the Meissner Effect with a Diamond Magnetometer
• Strongly Coupled Diamond Spin Qubits by Molecular Nitrogen Implantation
• Diamond Magnetometry of Superconducting Thin Films
• Collectively enhanced quantum measurements at the Heisenberg limit
• Optically detected NMR of optically hyperpolarized 31P neutral donors in 28Si
• Spin-Dependent Scattering off Neutral Antimony Donors in 28-Si Field-Effect Transistors
• Self-assembly of parallel atomic wires and periodic clusters of silicon on a vicinal Si(111) surface
• Electron Paramagnetic Resonance of Boron Acceptors in Isotopically Purified Silicon
• Isotope effect on electron paramagnetic resonance of boron acceptors in silicon
• Environment Assisted Metrology with Spin Qubit
• Hyperfine Clock Transitions of Bismuth Donors in Silicon Detected by Spin Dependent Recombination