Transport through an impurity tunnel coupled to a Si/SiGe quantum dot

Abstract

Achieving controllable coupling of dopants in silicon is crucial for operating donor-based qubit devices, but it is difficult because of the small size of donor-bound electron wavefunctions. Here we report the characterization of a quantum dot coupled to a localized electronic state, and we present evidence of controllable coupling between the quantum dot and the localized state. A set of measurements of transport through this device enable the determination of the most likely location of the localized state, consistent with an electronically active impurity in the quantum well near the edge of the quantum dot. The experiments we report are consistent with a gate-voltage controllable tunnel coupling, which is an important building block for hybrid donor and gate-defined quantum dot devices.

5 pages, 3 figures

References in corpus (7)

• An addressable quantum dot qubit with fault-tolerant control fidelity
• Electrically driven single electron spin resonance in a slanting Zeeman field
• Demonstration of Entanglement of Electrostatically Coupled Singlet-Triplet Qubits
• Circuit Quantum Electrodynamics with a Spin Qubit
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• Nonequilibrium work distributions in quantum impurity system-bath mixing processes
• Theoretical formulations on thermodynamics of quantum impurity systems
• Simple operation sequences to couple and interchange quantum information between spin qubits of different kinds
• Resonant tunneling spectroscopy of valley eigenstates on a hybrid double quantum dot
• Compressed Optimization of Device Architectures (CODA) for semiconductor quantum devices
• Spin-orbit coupling induced two-electron relaxation in silicon donor pairs