87 citations · 292 across the 8 of their papers we have counts for
8 papers
Coherent control and spectroscopy of a semiconductor quantum dot Wigner molecule
J. Corrigan, J. P. Dodson, H. Ekmel Ercan +12
Multi-electron semiconductor quantum dots have found wide application in qubits, where they enable readout and enhance polarizability. However, coherent control in such dots has ty…
Fabrication process and failure analysis for robust quantum dots in silicon
J. P. Dodson, Nathan Holman, Brandur Thorgrimsson +7
We present an improved fabrication process for overlapping aluminum gate quantum dot devices on Si/SiGe heterostructures that incorporates low-temperature inter-gate oxidation, the…
Signatures of atomic-scale structure in the energy dispersion and coherence of a Si quantum-dot qubit
J. C. Abadillo-Uriel, Brandur Thorgrimsson, Dohun Kim +11
We report anomalous behavior in the energy dispersion of a three-electron double-quantum-dot hybrid qubit and argue that it is caused by atomic-scale disorder at the quantum-well i…
The critical role of substrate disorder in valley splitting in Si quantum wells
Samuel F. Neyens, Ryan H. Foote, Brandur Thorgrimsson +11
Motivated by theoretical predictions that spatially complex concentration modulations of Si and Ge can increase the valley splitting in quantum wells, we grow and characterize Si/S…
Extending the coherence of a quantum dot hybrid qubit
Brandur Thorgrimsson, Dohun Kim, Yuan-Chi Yang +10
Identifying and ameliorating dominant sources of decoherence are important steps in understanding and improving quantum systems. Here we show that the free induction decay time ($T…
State-conditional coherent charge qubit oscillations in a Si/SiGe quadruple quantum dot
D. R. Ward, Dohun Kim, D. E. Savage +5
Universal quantum computation requires high fidelity single qubit rotations and controlled two qubit gates. Along with high fidelity single qubit gates, strong efforts have been ma…
Characterization of a gate-defined double quantum dot in a Si/SiGe nanomembrane
T. J. Knapp, R. T. Mohr, Yize Stephanie Li +9
We report the fabrication and characterization of a gate-defined double quantum dot formed in a Si/SiGe nanomembrane. In the past, all gate-defined quantum dots in Si/SiGe heterost…
Transport through an impurity tunnel coupled to a Si/SiGe quantum dot
Ryan H. Foote, Daniel R. Ward, J. R. Prance +8
Achieving controllable coupling of dopants in silicon is crucial for operating donor-based qubit devices, but it is difficult because of the small size of donor-bound electron wave…