49 citations · 156 across the 5 of their papers we have counts for
5 papers
In-Substrate Imaging of Diamond hBN FET Current via Widefield Quantum Diamond Microscopy
Anuj Bathla, Subrat Kumar Pradhan, Ajit Kumar Dash +7
We demonstrate widefield magnetic imaging of current flow in hydrogen terminated diamond field effect transistors (FETs) through in-substrate nitrogen vacancy (NV) centers. Hydroge…
CMOS back-end-of-line compatible ferroelectric tunnel junction devices
Veeresh Deshpande, Keerthana Shajil Nair, Marco Holzer +2
Ferroelectric tunnel junction devices based on ferroelectric thin films of solid solutions of hafnium dioxide can enable CMOS integration of ultra-low power ferroelectric devices w…
Silicon quantum dot devices with a self-aligned second gate layer
Simon Geyer, Leon C. Camenzind, Lukas Czornomaz +5
We implement silicon quantum dot devices with two layers of gate electrodes using a self-alignment technique, which allows for ultra-small gate lengths and intrinsically perfect la…
Ambipolar quantum dots in undoped silicon fin field-effect transistors
Andreas V. Kuhlmann, Veeresh Deshpande, Leon C. Camenzind +2
We integrate ambipolar quantum dots in silicon fin field-effect transistors using exclusively standard complementary metal-oxide-semiconductor fabrication techniques. We realize am…
A tunable, dual mode field-effect or single electron transistor
Benoît Roche, Benoit Voisin, Xavier Jehl +5
A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor techn…