22 citations · 43 across the 7 of their papers we have counts for
7 papers
Design Space and Variability Analysis of SOI MOSFET for Ultra-Low Power Band-to-Band Tunneling Neurons
Jay Sonawane, Shubham Patil, Abhishek Kadam +4
Large spiking neural networks (SNNs) require ultra-low power and low variability hardware for neuromorphic computing applications. Recently, a band-to-band tunneling-based (BTBT) i…
Charge-Trapping-Induced Compensation of the Ferroelectric Polarization in FTJs: Optimal Conditions for a Synaptic Device Operation
R. Fontanini, M. Segatto, K. S. Nair +7
In this work, we present a clear evidence, based on numerical simulations and experiments, that the polarization compensation due to trapped charge strongly influences the ON/ OFF…
Ferroelectric MirrorBit-Integrated Field-Programmable Memory Array for TCAM, Storage, and In-Memory Computing Applications
Paritosh Meihar, Rowtu Srinu, Sandip Lashkare +6
In-memory computing on a reconfigurable architecture is the emerging field which performs an application-based resource allocation for computational efficiency and energy optimizat…
Evolution of ferroelectricity with annealing temperature and thickness in sputter deposited undoped HfO on silicon
Md Hanif Ali, Adityanarayan Pandey, Rowtu Srinu +4
Ferroelectricity in sputtered undoped-HfO is attractive for composition control for low power and non-volatile memory and logic applications. Unlike doped HfO, evolution of…
Sub-10 nm Probing of Ferroelectricity in Heterogeneous Materials by Machine Learning Enabled Contact Kelvin Probe Force Microscopy
Sebastian W. Schmitt, Rama K. Vasudevan, Maurice Seifert +4
Reducing the dimensions of ferroelectric materials down to the nanoscale has strong implications on the ferroelectric polarization pattern and on the ability to switch the polariza…
A Ferroelectric Tunnel Junction-based Integrate-and-Fire Neuron
Paolo Gibertini, Luca Fehlings, Suzanne Lancaster +6
Event-based neuromorphic systems provide a low-power solution by using artificial neurons and synapses to process data asynchronously in the form of spikes. Ferroelectric Tunnel Ju…
Insights on the variability of Cu filament formation in the SiO2 electrolyte of quantized-conductance conductive bridge random access memory devices
Florian Maudet, Veeresh Deshpande, Catherine Dubourdieu
Conductive bridge random access memory devices such as Cu/SiO2/W are promising candidates for applications in neuromorphic computing due to their fast, low-voltage switching, multi…