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V. Deshpande

7 papers hereh-index 5195 citations22 works total

Matching runs newest-first, so older work may not be attached to this profile yet.

author position
  • middle author4
  • last author1

Across the 5 of 7 papers where every author was matched, so the position is known.

fields
  • cond-mat.mtrl-sci3
  • physics.app-ph2
  • cs.ET1
  • eess.SY1
same name
  • V. Deshpande — 21 papers, h 21
  • V. Deshpande — 10 papers, h 80
  • V. Deshpande — 5 papers, h 14
  • V. Deshpande — 2 papers, h 5
  • V. Deshpande — 1 paper, h 4
  • V. Deshpande — 1 paper, h 6

Either other researchers who publish under this name, or the same person where the external sources have not merged their records.

identity via Semantic Scholar / OpenAlex

most citedCharge-Trapping-Induced Compensation of the Ferroelectric Polarization in FTJs: Optimal Conditions for a Synaptic Device Operation

22 citations · 43 across the 7 of their papers we have counts for

collaborators
Showing cond-mat.mtrl-sciShow all

3 papers · 1 filter

cond-mat.mtrl-sci2023

Evolution of ferroelectricity with annealing temperature and thickness in sputter deposited undoped HfO2​ on silicon

Md Hanif Ali, Adityanarayan Pandey, Rowtu Srinu +4

Ferroelectricity in sputtered undoped-HfO2​ is attractive for composition control for low power and non-volatile memory and logic applications. Unlike doped HfO2​, evolution of…

cond-mat.mtrl-sci2023★ 6 cited

Sub-10 nm Probing of Ferroelectricity in Heterogeneous Materials by Machine Learning Enabled Contact Kelvin Probe Force Microscopy

Sebastian W. Schmitt, Rama K. Vasudevan, Maurice Seifert +4

Reducing the dimensions of ferroelectric materials down to the nanoscale has strong implications on the ferroelectric polarization pattern and on the ability to switch the polariza…

cond-mat.mtrl-sci2022★ 6 cited

Insights on the variability of Cu filament formation in the SiO2 electrolyte of quantized-conductance conductive bridge random access memory devices

Florian Maudet, Veeresh Deshpande, Catherine Dubourdieu

Conductive bridge random access memory devices such as Cu/SiO2/W are promising candidates for applications in neuromorphic computing due to their fast, low-voltage switching, multi…

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Not affiliated with arXiv. Researcher data from Semantic Scholar (ODC-BY) and OpenAlex.