23 citations · 32 across the 2 of their papers we have counts for
5 papers
Ambipolar quantum dots in intrinsic silicon
A. C. Betz, M. F. Gonzalez-Zalba, G. Podd +1
We electrically measure intrinsic silicon quantum dots with electrostatically defined tunnel barriers. The presence of both p-type and n-type ohmic contacts enables the accumulatio…
Charge Detection in Phosphorus-doped Silicon Double Quantum Dots
A. Rossi, T. Ferrus, G. J. Podd +1
We report charge detection in degenerately phosphorus-doped silicon double quantum dots (DQD) electrically connected to an electron reservoir. The sensing device is a single electr…
Charge Sensing in Intrinsic Silicon Quantum Dots
G. J. Podd, S. J. Angus, D. A. Williams +1
We report charge sensing measurements on a silicon quantum dot (QD) with a nearby silicon single electron transistor (SET) acting as an electrometer. The devices are electrostatica…
Detection of charge motion in a non-metallic silicon isolated double quantum dot
T. Ferrus, A. Rossi, M. Tanner +3
As semiconductor device dimensions are reduced to the nanometer scale, effects of high defect density surfaces on the transport properties become important to the extent that the m…
Fine and Large Coulomb Diamonds in a Silicon Quantum Dot
T. Kodera, T. Ferrus, T. Nakaoka +4
We experimentally study the transport properties of silicon quantum dots (QDs) fabricated from a highly doped n-type silicon-on-insulator wafer. Low noise electrical measurements u…