182 citations · 573 across the 11 of their papers we have counts for
11 papers
Ultrafast and Electrically Tunable Rabi Frequency in a Germanium Hut Wire Hole Spin Qubit
He Liu, Ke Wang, Fei Gao +9
Hole spin qubits based on germanium (Ge) have strong tunable spin orbit interaction (SOI) and ultrafast qubit operation speed. Here we report that the Rabi frequency (f_Rabi) of a…
Quantum Interference and Coherent Population Trapping in a Double Quantum Dot
Yuan Zhou, Ke Wang, He Liu +5
Quantum interference is a natural consequence of wave-particle duality in quantum mechanics, and is widely observed at the atomic scale. One interesting manifestation of quantum in…
Gate-Tunable Spin-Orbit Coupling in a Germanium Hole Double Quantum Dot
He Liu, Ting Zhang, Ke Wang +10
Hole spins confined in semiconductor quantum dot systems have gained considerable interest for their strong spin-orbit interactions (SOIs) and relatively weak hyperfine interaction…
Anisotropic g-Factor and Spin-Orbit Field in a Ge Hut Wire Double Quantum Dot
Ting Zhang, He Liu, Fei Gao +9
Holes in nanowires have drawn significant attention in recent years because of the strong spin-orbit interaction, which plays an important role in constructing Majorana zero modes…
Ultrafast coherent control of a hole spin qubit in a germanium quantum dot
Ke Wang, Gang Xu, Fei Gao +13
Operation speed and coherence time are two core measures for the viability of a qubit. Strong spin-orbit interaction (SOI) and relatively weak hyperfine interaction make holes in g…
Room temperature coherent manipulation of single-spin qubits in silicon carbide with a high readout contrast
Qiang Li, Jun-Feng Wang, Fei-Fei Yan +16
Spin defects in silicon carbide (SiC) with mature wafer-scale fabrication and micro/nano-processing technologies have recently drawn considerable attention. Although room temperatu…
Hole spin in tunable Ge hut wire double quantum dot
Gang Xu, Fei Gao, Ke Wang +8
Holes in germanium (Ge) exhibit strong spin-orbit interaction, which can be exploited for fast and all-electrical manipulation of spin states. Here, we report transport experiments…
Coherent control of nitrogen-vacancy center spins in silicon carbide at room temperature
Jun-Feng Wang, Fei-Fei Yan, Qiang Li +12
Solid-state color centers with manipulatable spin qubits and telecom-ranged fluorescence are ideal platforms for quantum communications and distributed quantum computations. In thi…
Dipole coupling of a tunable hole double quantum dot in germanium hut wire to a microwave resonator
Gang Xu, Yan Li, Fei Gao +8
The germanium (Ge) hut wire system has strong spin-orbit coupling, a long coherence time due to a very large heavy-light hole splitting, and the advantage of site-controlled large-…
Improving mobility of silicon metal-oxide-semiconductor devices for quantum dots by high vacuum activation annealing
Ke Wang, Hai-Ou Li, Gang Luo +10
To improve mobility of fabricated silicon metal-oxide-semiconductor (MOS) quantum devices, forming gas annealing is a common method used to mitigate the effects of disorder at the…
On-demand generation of shallow silicon vacancy in silicon carbide
Jun-Feng Wang, Qiang Li, Fei-Fei Yan +10
Defects in silicon carbide have been explored as promising spin systems in quantum technologies. However, for practical quantum metrology and quantum communication, it is critical…