6 papers
Anisotropic g-Factor and Spin-Orbit Field in a Ge Hut Wire Double Quantum Dot
Ting Zhang, He Liu, Fei Gao +9
Holes in nanowires have drawn significant attention in recent years because of the strong spin-orbit interaction, which plays an important role in constructing Majorana zero modes…
Hole spin in tunable Ge hut wire double quantum dot
Gang Xu, Fei Gao, Ke Wang +8
Holes in germanium (Ge) exhibit strong spin-orbit interaction, which can be exploited for fast and all-electrical manipulation of spin states. Here, we report transport experiments…
Coherent control of nitrogen-vacancy center spins in silicon carbide at room temperature
Jun-Feng Wang, Fei-Fei Yan, Qiang Li +12
Solid-state color centers with manipulatable spin qubits and telecom-ranged fluorescence are ideal platforms for quantum communications and distributed quantum computations. In thi…
Dipole coupling of a tunable hole double quantum dot in germanium hut wire to a microwave resonator
Gang Xu, Yan Li, Fei Gao +8
The germanium (Ge) hut wire system has strong spin-orbit coupling, a long coherence time due to a very large heavy-light hole splitting, and the advantage of site-controlled large-…
Improving mobility of silicon metal-oxide-semiconductor devices for quantum dots by high vacuum activation annealing
Ke Wang, Hai-Ou Li, Gang Luo +10
To improve mobility of fabricated silicon metal-oxide-semiconductor (MOS) quantum devices, forming gas annealing is a common method used to mitigate the effects of disorder at the…
On-demand generation of shallow silicon vacancy in silicon carbide
Jun-Feng Wang, Qiang Li, Fei-Fei Yan +10
Defects in silicon carbide have been explored as promising spin systems in quantum technologies. However, for practical quantum metrology and quantum communication, it is critical…