Coherent control of nitrogen-vacancy center spins in silicon carbide at room temperature

Abstract

Solid-state color centers with manipulatable spin qubits and telecom-ranged fluorescence are ideal platforms for quantum communications and distributed quantum computations. In this work, we coherently control the nitrogen-vacancy (NV) center spins in silicon carbide at room temperature, in which telecom-wavelength emission is detected. We increase the NV concentration six-fold through optimization of implantation conditions. Hence, coherent control of NV center spins is achieved at room temperature and the coherence time T2 can be reached to around 17.1 μs. Furthermore, investigation of fluorescence properties of single NV centers shows that they are room temperature photostable single photon sources at telecom range. Taking advantages of technologically mature materials, the experiment demonstrates that the NV centers in silicon carbide are promising platforms for large-scale integrated quantum photonics and long-distance quantum networks.

15 pages, 4 figures

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• Integrated quantum photonics with silicon carbide: challenges and prospects
• Purcell enhancement of a single silicon carbide color center with coherent spin control
• Silicon carbide for integrated photonics
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• Cavity-enhanced quantum network nodes
• Coherent Manipulation with Resonant Excitation and Single Emitter Creation of Nitrogen Vacancy Centers in 4H Silicon Carbide
• Coherent dynamics of multi-spin ${\mathrm{V}}_{\mathrm{B}}^{-}$ centers in hexagonal boron nitride
• Beating the Standard Quantum Limit under Ambient Conditions with Solid-State Spins
• Optical Charge Injection and Full Coherent Control of Spin-Qubit in the Telecom C-band Emitting Quantum Dot
• Novel color center platforms enabling fundamental scientific discovery
• Quantum Information Processing With Integrated Silicon Carbide Photonics
• Exploiting ionization dynamics in the nitrogen vacancy center for rapid, high-contrast spin and charge state initialization
• Laser Direct Writing of Visible Spin Defects in Hexagonal Boron Nitride for Applications in Spin-Based Technologies
• Temperature Dependent Photophysics of Single NV Centers in Diamond
• Maskless Generation of Single Silicon Vacancy Arrays in Silicon Carbide by a Focused He+ Ion Beam
• The Chlorine Vacancy in 4H-SiC: An NV-like Defect With Telecom Emission
• Plasmonic-enhanced bright single spin defects in silicon carbide membranes
• Quantum sensing with duplex qubits of silicon vacancy centers in SiC at room temperature
• Laser writing and spin control of near infrared emitters in silicon carbide
• 14N Hyperfine and nuclear interactions of axial and basal NV centers in 4H-SiC: A high frequency (94 GHz) ENDOR study
• Fiber-integrated silicon carbide silicon vacancy-based magnetometer
• Fluorescence enhancement of single V2 centers in a 4H-SiC cavity antenna
• Defects in Silicon Carbide as Quantum Qubits: Recent Advances in Defect Engineering
• Luminescence properties of closely packed organic color centers grafted on a carbon nanotube
• Roadmap on Integrated Quantum Photonics
• Temperature-dependent energy-level shifts of Spin Defects in hexagonal Boron Nitride
• Maximizing information obtainable by quantum sensors through the Quantum Zeno Effect
• Tunable magnetic field source for magnetic field imaging microscopy
• Engineering chlorine-based emitters in silicon carbide for telecom-band quantum technologies
• Point defects and their dynamic behaviors in silver monolayer intercalated between graphene and SiC
• Photoelectrical detection and characterization of divacancy and PL5-PL7 spins in silicon carbide
• Stability and molecular pathways to the formation of spin defects in silicon carbide
• Twenty years of quantum contextuality at USTC
• Wavelength-Dependent Electrical Readout of Spin Ensembles in a Thin-Film SiC-on-Insulator Platform
• Spin-photon Qubits for Scalable Quantum Network
• Room-Temperature Storage of Entanglement in a Silicon Carbide Quantum Node