182 citations · 580 across the 10 of their papers we have counts for
10 papers
Generation of Spin Defects by Ion Implantation in Hexagonal Boron Nitride
N. -J. Guo, W. Liu, Z. -P. Li +13
Optically addressable spin defects in wide-bandage semiconductors as promising systems for quantum information and sensing applications have attracted more and more attention recen…
Temperature dependence of divacancy spin coherence in implanted silicon carbide
Wu-Xi Lin, Fei-Fei Yan, Qiang Li +8
Spin defects in silicon carbide (SiC) have attracted increasing interest due to their excellent optical and spin properties, which are useful in quantum information processing. In…
Coherent dynamics of multi-spin centers in hexagonal boron nitride
W. Liu, V. Ivády, Z. -P. Li +18
Hexagonal boron nitride (hBN) has recently been demonstrated to contain optically polarized and detected electron spins that can be utilized for implementing qubits and quantum sen…
Temperature-dependent energy-level shifts of Spin Defects in hexagonal Boron Nitride
W. Liu, Z. -P. Li, Y. -Z. Yang +12
Two-dimensional hexagonal boron nitride (hBN) has attracted large attentions as platforms for realizations for integrated nanophotonics and collective effort has been focused on th…
Room temperature coherent manipulation of single-spin qubits in silicon carbide with a high readout contrast
Qiang Li, Jun-Feng Wang, Fei-Fei Yan +16
Spin defects in silicon carbide (SiC) with mature wafer-scale fabrication and micro/nano-processing technologies have recently drawn considerable attention. Although room temperatu…
Room-temperature coherent control of implanted defect spins in silicon carbide
Fei-Fei Yan, Ai-Lun Yi, Jun-Feng Wang +9
Recently, vacancy-related spin defects in silicon carbide (SiC) have been demonstrated to be potentially suitable for versatile quantum interface building and scalable quantum netw…