Room-Temperature Storage of Entanglement in a Silicon Carbide Quantum Node

Abstract

Robust entanglement at room temperature is a central challenge for solid-state quantum information processing and quantum-enhanced sensing. Here we demonstrate room-temperature storage of entanglement in a silicon carbide (SiC) quantum node by coherently transferring an electron-nuclear entangled state onto long-lived nuclear-spin memory qubits. Using a shallow single color center in 4H-SiC, conventionally denoted PL6, we realize a fully addressable three-qubit register composed of one electron-spin processor and two strongly coupled ${}^{29}$Si nuclear-spin memory qubits. This platform enables the deterministic generation of high-fidelity entangled states, including a nuclear-spin Bell state with a fidelity of $94\pm 2\%$ and a three-qubit Greenberger-Horne-Zeilinger (GHZ)-type state with a fidelity of $89\pm 4\%$. By implementing a SWAP-gate protocol in the strong hyperfine-coupling regime, the electron-nuclear entanglement is transferred to the nuclear-spin memory with a fidelity of $92.5\pm 2.5\%$, extending the entanglement lifetime by a factor of 240. We further confirm the generality of this approach in an additional heterogeneous ${}^{29}$Si-${}^{13}$C nuclear-spin register and, through a statistical survey of 200 single PL6 centers, show that multi-nuclear-spin registers occur naturally with probabilities above 10%. These results position shallow SiC color centers as a powerful platform for entanglement-assisted quantum sensing and scalable room-temperature quantum technologies.

Published in Physical Review Letters 137, 100803 (2026)

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