17 citations · 17 across the 2 of their papers we have counts for
2 papers
quant-ph2024
Robust single divacancy defects near stacking faults in 4H-SiC under resonant excitation
Zhen-Xuan He, Ji-Yang Zhou, Wu-Xi Lin +13
Color centers in silicon carbide (SiC) have demonstrated significant promise for quantum information processing. However, the undesirable ionization process that occurs during opti…
physics.optics2023★ 17 cited
Plasmonic-enhanced bright single spin defects in silicon carbide membranes
Ji-Yang Zhou, Qiang Li, Zhi-He Hao +10
Optically addressable spin defects in silicon carbide (SiC) have emerged as attractable platforms for various quantum technologies. However, the low photon count rate significantly…