Single-Shot Readout of a Nuclear Spin in Silicon Carbide

Abstract

Solid-state qubits with a photonic interface is very promising for quantum networks. Color centers in silicon carbide have shown excellent optical and spin coherence, even when integrated with membranes and nano-structures. Additionally, nuclear spins coupled with electron spins can serve as long-lived quantum memories. Pioneering work in previous has realized the initialization of a single nuclear spin and demonstrated its entanglement with an electron spin. In this paper, we report the first realization of single-shot readout for a nuclear spin in SiC. We obtain a deterministic readout fidelity of 98.2% with a measurement duration of 1.13 ms. With a dual-step readout scheme, we obtain a readout fidelity as high as 99.5% with a success efficiency of 89.8%. Our work complements the experimental toolbox of harnessing both electron and nuclear spins in SiC for future quantum networks.

5 pages, 4 figures

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Cited by in corpus (9)

• Single-Shot Readout and Weak Measurement of a Tin-Vacancy Qubit in Diamond
• Ultrafast high-fidelity state readout of single neutral atom
• Cavity enhancement of V2 centers in 4H-SiC with a fiber-based Fabry-Pérot microcavity
• Quantum enhanced electric field mapping within semiconductor devices
• Fluorescence enhancement of single V2 centers in a 4H-SiC cavity antenna
• Single-shot readout of the nuclear spin of an on-surface atom
• Nuclear spin polarization in silicon carbide at room temperature in the Earth's magnetic field
• Waveguide-integrated colour centres in silicon carbide with broadband photonic crystal reflectors for efficient readout
• Room-Temperature Storage of Entanglement in a Silicon Carbide Quantum Node