58 citations · 265 across the 12 of their papers we have counts for
12 papers
Scalable on-chip multiplexing of silicon single and double quantum dots
Heorhii Bohuslavskyi, Alberto Ronzani, Joel Hätinen +5
Owing to the maturity of complementary metal oxide semiconductor (CMOS) microelectronics, qubits realized with spins in silicon quantum dots (QDs) are considered among the most pro…
Dispersive readout of reconfigurable ambipolar quantum dots in a silicon-on-insulator nanowire
Jingyu Duan, Janne S. Lehtinen, Michael A. Fogarty +8
We report on ambipolar gate-defined quantum dots in silicon on insulator (SOI) nanowires fabricated using a customised complementary metal-oxide-semiconductor (CMOS) process. The a…
Fabrication and Electrical Characterization of Fully CMOS Si Single Electron Devices
P. J. Koppinen, M. D. Stewart, Neil M. Zimmerman
We present electrical data of silicon single electron devices fabricated with CMOS techniques and protocols. The easily tuned devices show clean Coulomb diamonds at T = 30 mK and c…
Single charge sensing and transport in double quantum dots fabricated from commercially grown Si/SiGe heterostructures
C. Payette, K. Wang, P. J. Koppinen +3
We perform quantum Hall measurements on three types of commercially available modulation doped Si/SiGe heterostructures to determine their suitability for depletion gate defined qu…
Reduction of low-frequency 1/f noise in Al-AlOx-Al tunnel junctions by thermal annealing
Juhani Julin, Panu Koppinen, Ilari Maasilta
We report that annealing Al-AlOx-Al tunnel junctions in a vacuum chamber at temperature of 400C reduces the characteristic 1/f noise in the junctions, in some cases by an order of…
Strain sensing with sub-micron sized Al-AlOx-Al tunnel junctions
P. J. Koppinen, J. T. Lievonen, M. Ahlskog +1
We demonstrate a local strain sensing method for nanostructures based on metallic Al tunnel junctions with AlOx barriers. The junctions were fabricated on top of a thin silicon nit…