96 citations · 181 across the 2 of their papers we have counts for
3 papers
Undoped accumulation-mode Si/SiGe quantum dots
Matthew G. Borselli, Kevin Eng, Richard S. Ross +11
We report on a quantum dot device design that combines the low disorder properties of undoped SiGe heterostructure materials with an overlapping gate stack in which each electrosta…
Pauli spin blockade in undoped Si/SiGe two-electron double quantum dots
Matthew G. Borselli, Kevin Eng, Edward T. Croke +12
We demonstrate double quantum dots fabricated in undoped Si/SiGe heterostructures relying on a double top-gated design. Charge sensing shows that we can reliably deplete these devi…
Measurement of valley splitting in high-symmetry Si/SiGe quantum dots
Matthew G. Borselli, Richard S. Ross, Andrey A. Kiselev +12
We have demonstrated few-electron quantum dots in Si/SiGe and InGaAs, with occupation number controllable from N = 0. These display a high degree of spatial symmetry and identifiab…