activity
20002026
most citedUniversal logic with encoded spin qubits in silicon

133 citations · 682 across the 18 of their papers we have counts for

collaborators

20 papers

quant-ph2026

Benchmarking exchange-only control of a 48-spin singlet manifold

HRL Quantum Team, Microsoft Collaborators, : +125

Exchange-only quantum computing benefits from high fidelity and straightforward control afforded by the exchange interaction. However, independently controllable qubits must be enc…

quant-ph2022★ 133 cited

Universal logic with encoded spin qubits in silicon

Aaron J. Weinstein, Matthew D. Reed, Aaron M. Jones +20

Qubits encoded in a decoherence-free subsystem and realized in exchange-coupled silicon quantum dots are promising candidates for fault-tolerant quantum computing. Benefits of this…

quant-ph2022★ 61 cited

Fast and high-fidelity state preparation and measurement in triple-quantum-dot spin qubits

Jacob Z. Blumoff, Andrew S. Pan, Tyler E. Keating +19

We demonstrate rapid, high-fidelity state preparation and measurement in exchange-only Si/SiGe triple-quantum-dot qubits. Fast measurement integration ( ns) and initialization…

quant-ph2018★ 28 cited

Spin-Blockade Spectroscopy of Si/SiGe Quantum Dots

A. M. Jones, E. J. Pritchett, E. H. Chen +15

We implement a technique for measuring the singlet-triplet energy splitting responsible for spin-to-charge conversion in semiconductor quantum dots. This method, which requires fas…

cond-mat.mes-hall2014

Undoped accumulation-mode Si/SiGe quantum dots

Matthew G. Borselli, Kevin Eng, Richard S. Ross +11

We report on a quantum dot device design that combines the low disorder properties of undoped SiGe heterostructure materials with an overlapping gate stack in which each electrosta…

cond-mat.mtrl-sci2011★ 17 cited

Probing Band-Tail States in Silicon MOS Heterostructures with Electron Spin Resonance

R. M. Jock, S. Shankar, A. M. Tyryshkin +7

We present an electron spin resonance (ESR) approach to characterize shallow electron trapping in band-tail states at Si/SiO2 interfaces in metal-oxide-semiconductor (MOS) devices…