133 citations · 682 across the 18 of their papers we have counts for
10 papers · 1 filter
Undoped accumulation-mode Si/SiGe quantum dots
Matthew G. Borselli, Kevin Eng, Richard S. Ross +11
We report on a quantum dot device design that combines the low disorder properties of undoped SiGe heterostructure materials with an overlapping gate stack in which each electrosta…
Spatial distribution of electrons on a superfluid helium charge-coupled device
Maika Takita, F. R. Bradbury, T. M. Gurrieri +4
Electrons floating on the surface of superfluid helium have been suggested as promising mobile spin qubits. Three micron wide channels fabricated with standard silicon processing a…
Triangulating tunneling resonances in a point contact
Nathaniel C. Bishop, Ralph W. Young, Gregory A. Ten Eyck +8
We observe resonant tunneling in silicon split gate point contacts implanted with antimony and defined in a self-aligned poly-silicon double gate enhancement mode Si-MOS device str…
Pauli spin blockade in undoped Si/SiGe two-electron double quantum dots
Matthew G. Borselli, Kevin Eng, Edward T. Croke +12
We demonstrate double quantum dots fabricated in undoped Si/SiGe heterostructures relying on a double top-gated design. Charge sensing shows that we can reliably deplete these devi…
Double quantum dot with tunable coupling in an enhancement-mode silicon metal-oxide semiconductor device with lateral geometry
L. A. Tracy, E. P. Nordberg, R. W. Young +9
We present transport measurements of a tunable silicon metal-oxide-semiconductor double quantum dot device with lateral geometry. Experimentally extracted gate-to-dot capacitances…
Charge sensing in enhancement mode double-top-gated metal-oxide-semiconductor quantum dots
E. P. Nordberg, H. L. Stalford, R. Young +10
Laterally coupled charge sensing of quantum dots is highly desirable, because it enables measurement even when conduction through the quantum dot itself is suppressed. In this work…