96 citations · 294 across the 6 of their papers we have counts for
7 papers
Fast and high-fidelity state preparation and measurement in triple-quantum-dot spin qubits
Jacob Z. Blumoff, Andrew S. Pan, Tyler E. Keating +19
We demonstrate rapid, high-fidelity state preparation and measurement in exchange-only Si/SiGe triple-quantum-dot qubits. Fast measurement integration ( ns) and initialization…
Spin-Blockade Spectroscopy of Si/SiGe Quantum Dots
A. M. Jones, E. J. Pritchett, E. H. Chen +15
We implement a technique for measuring the singlet-triplet energy splitting responsible for spin-to-charge conversion in semiconductor quantum dots. This method, which requires fas…
Undoped accumulation-mode Si/SiGe quantum dots
Matthew G. Borselli, Kevin Eng, Richard S. Ross +11
We report on a quantum dot device design that combines the low disorder properties of undoped SiGe heterostructure materials with an overlapping gate stack in which each electrosta…
Pauli spin blockade in undoped Si/SiGe two-electron double quantum dots
Matthew G. Borselli, Kevin Eng, Edward T. Croke +12
We demonstrate double quantum dots fabricated in undoped Si/SiGe heterostructures relying on a double top-gated design. Charge sensing shows that we can reliably deplete these devi…
Measurement of valley splitting in high-symmetry Si/SiGe quantum dots
Matthew G. Borselli, Richard S. Ross, Andrey A. Kiselev +12
We have demonstrated few-electron quantum dots in Si/SiGe and InGaAs, with occupation number controllable from N = 0. These display a high degree of spatial symmetry and identifiab…
Single-Gate Accumulation-Mode InGaAs Quantum Dot with a Vertically Integrated Charge Sensor
E. T. Croke, M. G. Borselli, M. F. Gyure +5
We report on the fabrication and characterization of a few-electron quantum dot controlled by a single gate electrode. Our device has a double-quantum-well design, in which the dop…