activity
20112023
most citedShuttling a single charge across a one-dimensional array of silicon quantum dots

282 citations · 1.3k across the 13 of their papers we have counts for

collaborators

14 papers

quant-ph2023★ 139 cited

High-Fidelity, Frequency-Flexible Two-Qubit Fluxonium Gates with a Transmon Coupler

Leon Ding, Max Hays, Youngkyu Sung +16

We propose and demonstrate an architecture for fluxonium-fluxonium two-qubit gates mediated by transmon couplers (FTF, for fluxonium-transmon-fluxonium). Relative to architectures…

quant-ph2022★ 5 cited

Extensible circuit-QED architecture via amplitude- and frequency-variable microwaves

Agustin Di Paolo, Catherine Leroux, Thomas M. Hazard +4

We introduce a circuit-QED architecture combining fixed-frequency qubits and microwave-driven couplers. In the appropriate frame, the drive parameters appear as tunable knobs enabl…

quant-ph2022★ 5 cited

Superconducting-semiconducting voltage-tunable qubits in the third dimension

Thomas M. Hazard, Andrew J. Kerman, Kyle Serniak +1

We propose superconducting-semiconducting (super-semi) qubit and coupler designs based on high-quality, compact through-silicon vias (TSVs). An interposer "probe" wafer containing…

quant-ph2019★ 156 cited

Experimental realization of an intrinsically error-protected superconducting qubit

Andras Gyenis, Pranav S. Mundada, Agustin Di Paolo +6

Encoding a qubit in logical quantum states with wavefunctions characterized by disjoint support and robust energies can offer simultaneous protection against relaxation and pure de…

cond-mat.mes-hall2018★ 68 cited

Single-Spin Relaxation in a Synthetic Spin-Orbit Field

F. Borjans, D. M. Zajac, T. M. Hazard +1

Strong magnetic field gradients can produce a synthetic spin-orbit interaction that allows for high fidelity electrical control of single electron spins. We investigate how a field…

cond-mat.mes-hall2018★ 13 cited

A low-disorder Metal-Oxide-Silicon double quantum dot

Jin-Sung Kim, Thomas M. Hazard, Andrew A. Houck +1

One of the biggest challenges impeding the progress of Metal-Oxide-Silicon (MOS) quantum dot devices is the presence of disorder at the Si/SiO interface which interferes with c…