282 citations · 1.3k across the 13 of their papers we have counts for
7 papers · 1 filter
Single-Spin Relaxation in a Synthetic Spin-Orbit Field
F. Borjans, D. M. Zajac, T. M. Hazard +1
Strong magnetic field gradients can produce a synthetic spin-orbit interaction that allows for high fidelity electrical control of single electron spins. We investigate how a field…
A low-disorder Metal-Oxide-Silicon double quantum dot
Jin-Sung Kim, Thomas M. Hazard, Andrew A. Houck +1
One of the biggest challenges impeding the progress of Metal-Oxide-Silicon (MOS) quantum dot devices is the presence of disorder at the Si/SiO interface which interferes with c…
Shuttling a single charge across a one-dimensional array of silicon quantum dots
A. R. Mills, D. M. Zajac, M. J. Gullans +3
Significant advances have been made towards fault-tolerant operation of silicon spin qubits, with single qubit fidelities exceeding 99.9%, several demonstrations of two-qubit gates…
Investigation of Mobility Limiting Mechanisms in Undoped Si/SiGe Heterostructures
X. Mi, T. M. Hazard, C. Payette +4
We perform detailed magnetotransport studies on two-dimensional electron gases (2DEGs) formed in undoped Si/SiGe heterostructures in order to identify the electron mobility limitin…
A Reconfigurable Gate Architecture for Si/SiGe Quantum Dots
D. M. Zajac, T. M. Hazard, X. Mi +2
We demonstrate a reconfigurable quantum dot gate architecture that incorporates two interchangeable transport channels. One channel is used to form quantum dots and the other is us…
Undoped accumulation-mode Si/SiGe quantum dots
Matthew G. Borselli, Kevin Eng, Richard S. Ross +11
We report on a quantum dot device design that combines the low disorder properties of undoped SiGe heterostructure materials with an overlapping gate stack in which each electrosta…